Abstract: The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.

Abstract: The present invention refers to a method as well as an apparatus for producing a solar cell module having an array of photovoltaic cells on a common substrate, the apparatus comprising at least one treating chamber for depositing a layer on a substrate and at least one laser for patterning the deposited layer, wherein a treating chamber for laser patterning comprising means for setting up technical vacuum conditions is provided for.

Abstract: An electrode assembly 12 for a PECVD (Plasma Enhanced Chemical Vapour Deposition) coating installation comprises a base plate 13, a separation plate 14 and an electrode plate 15. The electrode plate 15 includes frame members 16. Fixing elements 17 are provided for fixing the electrode plate 15 to the base plate 13. Furthermore, the electrode assembly 12 comprises a plurality of gas distribution elements 2 that distribute process gas to provide a homogeneous plasma P above the surface of a substrate 19. In this way a uniform coating can be deposited on the substrate 19. The gas distribution elements 2 are modules having a similar or identical construction. Therefore, they may be manufactured in particular machines and handled easily before being integrated in an electrode assembly according to the present invention.

Abstract: The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.

Abstract: A device is disclosed for supporting a plasma-enhanced coating process. The device is disposed in the vicinity of a plasma and/or a substrate to be coated and/or an electrode provided for plasma generation. The device at least partially surrounds or limits a side or a plane of the plasma area or a plane in which the substrate or a carrying element carrying the substrate can be arranged, or of one of the electrodes or parts. The device comprises a cavity or a suction channel with one or several suction openings through which a gaseous medium can be suctioned off.

Abstract: The present invention concerns a method for the generation of a transparent conductive oxide coating (TCO layer), in particular a transparent conductive oxide coating as a transparent contact for thin section solar cells. The TCO layer consists at least of a first layer of high conductivity and a second layer of low conductivity, with the second layer generated by DC sputtering of at least one target, which contains zinc oxide and additionally aluminum, and the process atmosphere contains oxygen. Further, the present invention relates to a TCO layer as well as thin section solar cells on CIGS and CdTe basis.

Abstract: A coating installation coating installation includes a process chamber and a gas line system for supplying a gas into the process chamber. The gas line system has at least one feed opening for feeding gases into the gas line system and outlet openings for letting the gas out of the gas line system. Lines are each arranged between the feed opening(s) and the outlet openings. The flow resistance of the lines between the at least one feed opening and the outlet openings is essentially equally large. The gas line system has at least one branch point at which a first line section opens into at least three second line sections connected to the first line section. The first and second line sections are arranged in different levels and branch out like a tree structure. The line sections may be milled as a recess and/or depression in plates.

Abstract: The invention relates to a method for the production of an SiN:H layer on a substrate which converts light into electric voltage, wherein a silicon-containing target is sputtered and at least one reactive gas in introduced into the volume between target and substrate. The silicon-containing target is implemented in the form of a tube and is comprised of an Si-based alloy with an Al content of 2 to 50 wt. %.

Abstract: One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power supply configured to provide a signal to the magnetron; and a pulse control connected to the power supply. The pulse control is configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and/or the contour of the plurality of pulses.