Abstract: A method for manufacturing an optoelectronic device including an array of diodes and photoluminescent pads arranged opposite at least one diode, including making an electret layer over the array of diodes, by localized polarization or depolarization, optically, so as to form surface potential patterns; and making the photoluminescent pads, by contact of the electret layer with a colloidal solution containing photoluminescent particles, which are then deposited over the upper face of the electret layer opposite the predefined surface potential patterns, thereby forming the photoluminescent pads.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

Abstract: A method for manufacturing an optoelectronic device including an array of diodes and photoluminescent pads arranged opposite at least one diode, including making an electret layer over the array of diodes, by localized polarization or depolarization, optically, so as to form surface potential patterns; and making the photoluminescent pads, by contact of the electret layer with a colloidal solution containing photoluminescent particles, which are then deposited over the upper face of the electret layer opposite the predefined surface potential patterns, thereby forming the photoluminescent pads.

Abstract: Method for manufacturing micro-LEDs comprising the following steps: i) providing a stack comprising at least one strongly n-doped GaN layer (104), an n-doped GaN layer (105), quantum wells (106) and a p-doped GaN layer (107), ii) porosifying the GaN layer (104), to obtain a porosified GaN layer (104?), iii) forming mesas in the stack, iv) covering the porosified GaN layer (104?) with a second electrode (301) or with an encapsulation layer (302), the second electrode (301) or the encapsulation layer (302) being in direct contact with the porosified GaN layer (104?). step ii) being carried out so that the optical index of the porosified GaN layer (104?) does not vary by more than 10% with respect to the optical index of the second electrode (301) and/or with respect to the optical index of the encapsulation layer (302).