Abstract: An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: A memory and an electronic device are provided. The memory includes a storage element (10), a first transistor (21), a second transistor (22), a first bit line (BLA), and a second bit line (BLB). The storage element (10) is coupled to the first bit line (BLA) and the second bit line (BLB) by separately using the first transistor (21) and the second transistor (22), and the first transistor (21) and the second transistor (22) are turned on during a write operation. When the foregoing solution is used, compared with providing a required write current by using one transistor, providing the write current by using the two transistors may enable a smaller transistor to meet a requirement, thereby reducing an area required by the entire memory. In addition, the memory in this application can still support a dual-port feature in a read operation.

Abstract: An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: The invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove,; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: The invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove,; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: A method and a system are provided for performing memory access assist using voltage boost. A memory access request is received at a storage cell array that comprises two or more subarrays, each subarray including at least one row of storage cells. The voltage boost is applied, during the memory access, to a first negative supply voltage of a first storage cell subarray of the two or more storage cell subarrays. The first negative supply voltage of the first storage cell subarray is lower than a second negative supply voltage of a second storage cell subarray of the two or more storage cell subarrays.

Abstract: A method and a system are provided for performing memory access assist using voltage boost. A memory access request is received at a storage cell array that comprises two or more subarrays, each subarray including at least one row of storage cells. The voltage boost is applied, during the memory access, to a first negative supply voltage of a first storage cell subarray of the two or more storage cell subarrays. The first negative supply voltage of the first storage cell subarray is lower than a second negative supply voltage of a second storage cell subarray of the two or more storage cell subarrays.

Abstract: According to one aspect of the present disclosure, there is provided a flip flop circuit, comprising a first input circuit configured to receive a clock input signal and input data and comprising a first node. The flip-clop circuit further comprises a second input circuit configured to receive the input data and an inverse of the clock signal and comprising a second node. The first and second input circuits are configured such that the first node and the second node are pre-charged to respective complementary states when the clock signal is at a first level and, dependent on a value of the input data, one of said first and second nodes changes state to a state complementary to its pre-charged state when the clock signal transitions from the first level to a second level.