Patents by Inventor Stephane Becu

Stephane Becu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and production process of a microelectronic 3D memory device of flash NAND type
    Patent number: 9053976
    Abstract: A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: June 9, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Thomas Ernst, Gabriel Molas, Barbara De Salvo, Stephane Becu
  • STRUCTURE AND PRODUCTION PROCESS OF A MICROELECTRONIC 3D MEMORY DEVICE OF FLASH NAND TYPE
    Publication number: 20110169067
    Abstract: A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material.
    Type: Application
    Filed: July 10, 2009
    Publication date: July 14, 2011
    Applicant: COMM A L'ENER ATOM ET AUX ENERGIES ALT.
    Inventors: Thomas Ernst, Gabriel Molas, Barbara De Salvo, Stephane Becu