Patents by Inventor Stephane Bourdais

Stephane Bourdais has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF MANUFACTURING A LARGE-GRAIN CRYSTALLIZED METAL CHALCOGENIDE FILM, AND A CRYSTALLIZED METAL CHALCOGENIDE FILM PREPARED USING THE METHOD
    Publication number: 20200215509
    Abstract: The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu2ZnSnS4 (CZTS) type and to the obtained colloidal solution. The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.
    Type: Application
    Filed: March 17, 2020
    Publication date: July 9, 2020
    Applicant: IMRA EUROPE SAS
    Inventors: Stephane BOURDAIS, Christophe CHONE, Yan CUCCARO
  • Large-grain crystallized metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods
    Patent number: 10632441
    Abstract: The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu2ZnSnS4 (CZTS) type and to the obtained colloidal solution. The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: April 28, 2020
    Assignee: IMRA EUROPE SAS
    Inventors: Stephane Bourdais, Christophe Chone, Yan Cuccaro
  • LARGE-GRAIN CRYSTALLIZED METAL CHALCOGENIDE FILM, COLLOIDAL SOLUTION OF AMORPHOUS PARTICLES, AND PREPARATION METHODS
    Publication number: 20170320037
    Abstract: The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu2ZnSnS4 (CZTS) type and to the obtained colloidal solution. The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.
    Type: Application
    Filed: July 21, 2017
    Publication date: November 9, 2017
    Applicant: IMRA EUROPE SAS
    Inventors: Stephane BOURDAIS, Christophe CHONE, Yan CUCCARO
  • Large-grain crystallized metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods
    Patent number: 9731262
    Abstract: The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu2ZnSnS4 (CZTS) type and to the obtained colloidal solution. The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.
    Type: Grant
    Filed: July 4, 2013
    Date of Patent: August 15, 2017
    Assignee: IMRA EUROPE SAS
    Inventors: Stephane Bourdais, Christophe Chone, Yan Cuccaro
  • Method for preparing a thin layer of an absorber made of copper, zinc and tin sulfide(s), annealed thin layer and photovoltaic device thus obtained
    Patent number: 9391231
    Abstract: The present invention provides a thin compact crystallized layer with large grains of an absorber material essentially consisting of Cu, Zn and Sn sulphide(s), preferably CZTS, with less defects and preferably with improved composition homogeneity and/or reduced content of secondary phases, by producing a method for double annealing, in determined atmospheres, of thin layers of particles of a so-called absorber material based on copper, zinc and tin sulphide, preferably on CZTS, deposited on a substrate covered with molybdenum (Mo), said thin annealed absorber layer deposited on said Mo substrate imparting improved photovoltaic performances to a photovoltaic device which comprises them.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: July 12, 2016
    Assignee: IMRA EUROPE SAS
    Inventors: Alain Jacob, Gerardo Larramona, Stephane Bourdais, Christophe Chone, Yan Cuccaro
  • METHOD FOR PREPARING A THIN LAYER OF AN ABSORBER MADE OF COPPER, ZINC AND TIN SULFIDE(S), ANNEALED THIN LAYER AND PHOTOVOLTAIC DEVICE THUS OBTAINED
    Publication number: 20150333212
    Abstract: The present invention provides a thin compact crystallized layer with large grains of an absorber material essentially consisting of Cu, Zn and Sn sulphide(s), preferably CZTS, with less defects and preferably with improved composition homogeneity and/or reduced content of secondary phases, by producing a method for double annealing, in determined atmospheres, of thin layers of particles of a so-called absorber material based on copper, zinc and tin sulphide, preferably on CZTS, deposited on a substrate covered with molybdenum (Mo), said thin annealed absorber layer deposited on said Mo substrate imparting improved photovoltaic performances to a photovoltaic device which comprises them.
    Type: Application
    Filed: November 26, 2013
    Publication date: November 19, 2015
    Inventors: Alain JACOB, Gerardo LARRAMONA, Stephane BOURDAIS, Christophe CHONE, Yan CUCCARO
  • LARGE-GRAIN CRYSTALLIZED METAL CHALCOGENIDE FILM, COLLOIDAL SOLUTION OF AMORPHOUS PARTICLES, AND PREPARATION METHODS
    Publication number: 20150194548
    Abstract: The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu2ZnSnS4 (CZTS) type and to the obtained colloidal solution. The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.
    Type: Application
    Filed: July 4, 2013
    Publication date: July 9, 2015
    Inventors: Stephane Bourdais, Christophe Chone, Yan Cuccaro