Abstract: Method for estimating a gas flow in an enclosure maintained in a low pressure regimen relative to the gas, including: measuring, as a function of time, a gas flow Jmeasurement in the enclosure, and estimating values of the parameters A and B iteratively implemented by decreasing an estimation error based on a difference between Jestim(t) and Jmeasurement, and wherein, when Jmeasurement corresponds to a pressure rise of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estim ? ( t ) = 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - 2 ? ( n + 1 ) 2 4 ? B ? ( t - OffX ) ) + OffY and when Jmeasurement corresponds to a pressure decrease of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estm ? ( t ) = P init - 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - ( 2 ? n + 1 ) 2

Abstract: A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

Abstract: Method for estimating a gas flow in an enclosure maintained in a low pressure regimen relative to the gas, including: measuring, as a function of time, a gas flow Jmeasurement in the enclosure, and estimating values of the parameters A and B iteratively implemented by decreasing an estimation error based on a difference between Jestim(t) and Jmeasurement, and wherein, when Jmeasurement corresponds to a pressure rise of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estim ? ( t ) = 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - 2 ? ( n + 1 ) 2 4 ? B ? ( t - OffX ) ) + OffY and when Jmeasurement corresponds to a pressure decrease of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estm ? ( t ) = P init - 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - ( 2 ? n + 1 ) 2

Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.

Abstract: The present invention relates to the use of a specific multilayer structure in the front and/or rear protective sheet of a photovoltaic module comprising photovoltaic cells covered with an encapsulant. This multilayer structure comprises a substrate enclosing at least one halogenated polymer and at least one stack of one layer (A) of SiO2 and one layer (B) of an SiOxNyHz material disposed between the substrate and the layer (A), said layers having given thicknesses. This stack is disposed on the face of the substrate turned towards the encapsulant and optionally on the opposing face of the substrate. It also relates to a photovoltaic module comprising the abovementioned multilayer structure in the front and/or rear protective sheet thereof.

Abstract: A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.

Abstract: The invention relates to a method for measuring gases permeation through a material (M), comprising the steps of: Forming a mixture of isotopic gases in a mixing enclosure (14), each isotopic gas corresponding to a target gas for which permeation through the material (M) is sought, the isotopic gas having a mass number different from that of the corresponding target gas; Filling with the mixture of isotopic gases a first chamber (11) of a permeation: enclosure (10) comprising first (11) and second (12) chambers, the first chamber (11) being separated from the second chamber (12) by the material (M); Simultaneously analysing the isotopic gases having permeated through the material (M) and being present in the second chamber (12), in order to simultaneously calculate permeation through the material (M) of each of the corresponding target gases. The invention further relates to a device for implementing such a method, and a method for using this device.