Abstract: An amplifier circuit comprising: an amplifier; an output limiter for providing a variable impedance comprising: a first and second limiter terminal; a transistor comprising a conduction channel; a first resistor coupled in parallel with the conduction channel; and a capacitor coupled in series with the conduction channel between the conduction channel and the first or second limiter terminal; and a feedback control unit comprising a comparator block configured to provide a control signal to the output limiter based on a comparison of the amplifier output signal and a setting voltage; wherein: the first limiter terminal is coupled to the amplifier input or output; the second limiter terminal receives a reference voltage; and wherein receipt of the control signal at the transistor provides for a variable impedance for the amplifier circuit dependent on the amplifier output signal.

Abstract: In accordance with a first aspect of the present disclosure, a tunable attenuator is provided, comprising: one or more transformer windings configured to facilitate attenuating a signal; one or more conductive loops provided underneath the transforming windings; a controller configured to control an amount of current flowing through the conductive loops, thereby providing a tunable attenuation of said signal. In accordance with a second aspect of the present disclosure, a corresponding method of producing a tunable attenuator is conceived.

Abstract: An integrated circuit device includes an integrated circuit device die and a substrate. The integrated circuit device die includes a plurality of first contact pads. The first contact pads include a pair of first signal contact pads configured to provide a differential signal port of the integrated circuit device die. The differential signal port is configured to operate at a predetermined frequency. The substrate includes a plurality of second contact pads on a first surface of the substrate. The second contact pads are configured to be soldered to a printed circuit board, and include a pair of second signal contact pads. The integrated circuit device die is affixed to a second surface of the substrate via the first contact pads. The substrate includes a pair of circuit paths that each couple one of the first signal contact pads to an associated one of the second signal contact pads.

Abstract: Multi-channel radio frequency (RF) transmitter (100) and method of calibrating the transmitter are provided.

Abstract: A transceiver includes a transmitter, a frequency synthesizer coupled to the transmitter, a receiver coupled to the frequency synthesizer and a voltage sensor; and a digital controller coupled to the voltage sensor, the receiver, and the transmitter, wherein based on a DC voltage measurement of an IF signal made by the voltage sensor, a relative phase adjustment occurs of a relative phase associated with a local oscillator (LO) port and a radio frequency (RF) port of the receiver.

Abstract: There is disclosed an amplifier circuit comprising: an amplifier having input and output terminals; a temperature dependent variable impedance unit comprising: a first terminal, a second terminal and a variable impedance unit control terminal; a transistor comprising a transistor control terminal coupled to the variable impedance unit control terminal; a first resistor coupled in parallel with the conduction channel; a capacitor coupled in series with the conduction channel between the conduction channel and one of: the first terminal; and the second terminal; and wherein: the first terminal is coupled to one of: the input terminal and the output terminal; the second terminal is for coupling to a reference node; and the variable impedance unit control terminal is configured to receive a control signal that is based on a measured temperature indicative of a temperature of the amplifier circuit and thereby provide a temperature dependent variable impedance for the amplifier circuit.

Abstract: An amplifier circuit comprising: an amplifier; an output limiter for providing a variable impedance comprising: a first and second limiter terminal; a transistor comprising a conduction channel; a first resistor coupled in parallel with the conduction channel; and a capacitor coupled in series with the conduction channel between the conduction channel and the first or second limiter terminal; and a feedback control unit comprising a comparator block configured to provide a control signal to the output limiter based on a comparison of the amplifier output signal and a setting voltage; wherein: the first limiter terminal is coupled to the amplifier input or output; the second limiter terminal receives a reference voltage; and wherein receipt of the control signal at the transistor provides for a variable impedance for the amplifier circuit dependent on the amplifier output signal.

Abstract: An example apparatus (100) is for use for use with front-end circuitry (102) to transmit and receive radar wave signals, The apparatus (100) includes digital phase locked loop (PLL) circuitry (104) and a control circuit (106). The digital PLL circuitry (106) provides a chirp sequence with frequency modulated continuous wave signals (FMCW), the FMCW signals being chirps containing a start frequency and a stop frequency, representing a selected chirp bandwidth (BW). The digital PLL circuitry (104) includes the DCO circuit (108) which frequency resolution is configured and arranged to be tuned relative to the selected chirp BW, the frequency resolution configured in response to a selected level of capacitance. The control circuit (106) controls the selected level of capacitance used by the DCO circuit (108) by changing the frequency resolution of the DCO according to the selected chirp BW, wherein different frequency resolutions are used for a first selected chirp BW and for a second selected chirp BW.

Abstract: An example apparatus (100) is for use for use with front-end circuitry (102) to transmit and receive radar wave signals, The apparatus (100) includes digital phase locked loop (PLL) circuitry (104) and a control circuit (106). The digital PLL circuitry (106) provides a chirp sequence with frequency modulated continuous wave signals (FMCW), the FMCW signals being chirps containing a start frequency and a stop frequency, representing a selected chirp bandwidth (BW). The digital PLL circuitry (104) includes the DCO circuit (108) which frequency resolution is configured and arranged to be tuned relative to the selected chirp BW, the frequency resolution configured in response to a selected level of capacitance. The control circuit (106) controls the selected level of capacitance used by the DCO circuit (108) by changing the frequency resolution of the DCO according to the selected chirp BW, wherein different frequency resolutions are used for a first selected chirp BW and for a second selected chirp BW.

Abstract: A transceiver includes a transmitter, a frequency synthesizer coupled to the transmitter, a receiver coupled to the frequency synthesizer and a voltage sensor; and a digital controller coupled to the voltage sensor, the receiver, and the transmitter, wherein based on a DC voltage measurement of an IF signal made by the voltage sensor, a relative phase adjustment occurs of a relative phase associated with a local oscillator (LO) port and a radio frequency (RF) port of the receiver.

Abstract: Multi-channel radio frequency (RF) transmitter (100) and method of calibrating the transmitter are provided.

Abstract: A semiconductor device package comprising a circuit chip and a wafer level chip scale package is designed for reducing capacitive interactions which exist between electrically conducting portions of the circuit chip and under-bump metallization areas of the package. Such design is beneficial in particular for under-bump metallization areas which are dedicated to transferring signals having frequencies above 30 GHz.

Abstract: A semiconductor device package comprising a circuit chip and a wafer level chip scale package is designed for reducing capacitive interactions which exist between electrically conducting portions of the circuit chip and under-bump metallization areas of the package. Such design is beneficial in particular for under-bump metallization areas which are dedicated to transferring signals having frequencies above 30 GHz.