Abstract: A method for fabricating an optoelectronic component includes at least one photodiode, the steps of the method making it possible to move the electric carrier collection field to the layer least sensitive to radiation, thus reducing the influence of irradiation on the dark current.

Abstract: The invention concerns a method for fabricating at least one detector pixel cell (45) connected to an element (82) formed in a weakly doped silicon substrate (81), characterized in that it comprises: firstly, a first step to fabricate at least one layer (61) by implantation doping and activation annealing, secondly, a second step to fabricate at least one connection node (85) in a circuit (83), from an element (82) formed in the substrate (81) by dry etching and metallization, a step to combine, by bonding, the fabricated doped layer (61) with the fabricated connection node (85); and a step to individualize at least one pixel cell (45) in the doped layer (61) by dry etching; and a passivation and opening step opposite the individualized cell (45), by dry etching. The invention also comprises a sensor including at least one such cell.

Abstract: The invention relates to a method for producing an infrared radiation sensor, said sensor comprising an infrared photodiode array formed in a first material and a reading circuit formed in a second material, said method comprising the steps of: sticking, through molecular adhesion, a first material side surface onto an optically transparent crystalline material side surface having infrared radiation and a coefficient of thermal expansion similar to that of the second material, give or take 20%; thinning the body of the first material side surface so that the latter is less that 25 ?m; producing infrared-sensitive photodiodes onto the thus-thinned first material side surface; depositing contact ball bearings onto the infrared photodiodes; and mounting the reading circuit onto the first material side surface through flip chip technology.

Abstract: The present invention relates to a monolithic optical component (400) comprising a light-absorbing layer and a waveguide structure (2). The invention is more particularly adapted to a monolithic component (400) comprising an evanescent coupling photodiode (6) integrated with the waveguide (2). The monolithic optical component (400) comprises a light-absorbing layer and a waveguide (2) evanescently coupled with the light-absorbing layer, the waveguide (2) having one end coupled to an input face (12) of the component to receive an input wave, the 10 component (400) being characterized in that the input face is convex.

Abstract: The present invention relates to a monolithic optical component (400) comprising a light-absorbing layer and a waveguide structure (2). The invention is more particularly adapted to a monolithic component (400) comprising an evanescent coupling photodiode (6) integrated with the waveguide (2). The monolithic optical component (400) comprises a light-absorbing layer and a waveguide (2) evanescently coupled with the light-absorbing layer, the waveguide (2) having one end coupled to an input face (12) of the component to receive an input wave, the 10 component (400) being characterized in that the input face is convex.