Patents by Inventor Stephane Malhouitre

Stephane Malhouitre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MANUFACTURING A MIXED LAYER COMPRISING A SILICON WAVEGUIDE AND A SILICON NITRIDE WAVEGUIDE
    Publication number: 20230168429
    Abstract: A fabricating process may include: producing a trench, in an encapsulated-silicon layer, in the location where a silicon-nitride core of the waveguide must be produced; then depositing a silicon-nitride layer on the encapsulated-silicon layer, the thickness of the deposited silicon-nitride layer being sufficient to completely fill the trench; then removing the silicon nitride situated outside of the trench to uncover an upper face with which the trench filled with silicon nitride is flush; then depositing a dielectric layer that covers the uncovered upper face in order to finalize the encapsulation of the silicon-nitride core and thus to obtain a mixed layer containing both the silicon and silicon-nitride cores encapsulated in dielectric.
    Type: Application
    Filed: April 6, 2021
    Publication date: June 1, 2023
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, THALES
    Inventors: Stephane MALHOUITRE, David BITAULD, Karim HASSAN, Joan RAMIREZ, Alexandre SHEN
  • Metal barrier behavior by SiC:H deposition on porous materials
    Patent number: 6541842
    Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: April 1, 2003
    Assignee: Dow Corning Corporation
    Inventors: Herman Meynen, William Kenneth Weidner, Francesca Iacopi, Stephane Malhouitre
  • METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS
    Publication number: 20030001282
    Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.
    Type: Application
    Filed: June 25, 2002
    Publication date: January 2, 2003
    Inventors: Herman Meynen, William Kenneth Weidner, Francesca Iacopi, Stephane Malhouitre