Abstract: The invention relates to a mineral composition for the preparation of foundry molds, comprising: (a) from 20% to 90% by weight of plaster, (b) from 10% to 80% by weight of a mineral component based on silica and/or alumina, and (c) from 0.5% to 4.8%, preferably from 1.5% to 4.5% and in particular between 2% and 4.5% by weight, of a mineral powder having a thermal conductivity (?), at 20° C., of greater than 15 W/(m·K) and a specific surface area of greater than 10 m2/g, these percentages being relative to the total weight of the sum of the components (a), (b) and (c).

Abstract: The invention relates to a mineral composition for the preparation of foundry moulds, comprising: (a) from 20% to 90% by weight of plaster, (b) from 10% to 80% by weight of a mineral component based on silica and/or alumina, and (c) from 0.5% to 4.8%, preferably from 1.5% to 4.5% and in particular between 2% and 4.5% by weight, of a mineral powder having a thermal conductivity (X), at 20° C., of greater than 15 W/(m.K) and a specific surface area of greater than 10 m2/g, these percentages being relative to the total weight of the sum of the components (a), (b) and (c).

Abstract: A scouring material is disclosed that comprises upstanding flock fibres secured to a substrate web material by an adhesive. The colours of the fibres and adhesive being such that the apparent colour of a flocked area of the substrate changes as the flock fibres in that area wear away.

Abstract: A wiping article (1), for cleaning surfaces, comprises a liquid-absorbent web material and, disposed on a liquid-absorbent surface thereof, abrasive areas (5) comprising at least cured particulate binder material, the abrasive areas being spaced apart by liquid-absorbent areas (4) of the web material. A method for making the wiping article, for cleaning surfaces, the method comprising the steps of: providing a liquid-absorbent web material; providing a dry particulate material that comprises at least particulate curable binder material; depositing spaced areas of the dry particulate material on a liquid-absorbent surface of the web material; and curing the binder material to form spaced abrasive areas on the surface of the web material, the said abrasive areas being spaced apart by liquid-absorbent areas of the web material.

Abstract: The present invention involves a composition comprising a fluorochemical compound, an agent to impart gloss, and water, and a wipe containing this composition. The composition and wipe are preferably used for cleaning, protecting and imparting gloss to a substrate, such as natural or artificial leather.

Abstract: The present invention involves a composition comprising a fluorochemical compound, an agent to impart gloss, and water, and a wipe containing this composition. The composition and wipe are preferably used for cleaning, protecting and imparting gloss to a substrate, such as natural or artificial leather.

Abstract: There is disclosed a method of forming contacts and metal lands onto a semiconductor structure at the first level of metallization (M0). The initial structure is a silicon substrate having diffusion regions formed therein and a plurality of gate conductor stacks formed thereon. The structure is passivated by an insulating layer. Contact holes of a first type are etched in the insulating layer to expose some diffusion regions, then filled with doped polysilicon to form conductive studs substantially coplanar with the insulating layer surface. A first mask (M0) is formed at the surface of the structure to expose M0 land recess locations including above said studs. The masked structure is anisotropically dry etched to create M0 land recesses. Next, the M0 mask is removed. A second mask (CS) is formed at the surface of the structure to expose desired contact hole locations of a second type.

Abstract: In the fabrication of EDRAM/SDRAM silicon chips with ground rules beyond 0.18 microns, a Si3N4 barrier layer is deposited onto the patterned structure during the borderless polysilicon contact fabrication. It is required that this layer be conformal and has a high hydrogen atom content to prevent junction leakage. These objectives are met with the method of the present invention. In a first embodiment, the Si3N4 layer is deposited in a Rapid Thermal Chemical Vapor Deposition (RTCVD) reactor using a NH3/SiH4 chemistry at a temperature and a pressure in the 600-950° C. and 50-200 Torr ranges respectively. In a second embodiment, it is deposited in a Low Pressure Chemical Vapor Deposition (LPCVD) furnace using a NH3/SiH2Cl2 chemistry (preferred ratio 1:1) at a temperature and a pressure in the 640-700° C. and 0.2-0.8 Torr ranges respectively.