Patents by Inventor Stephane Tyc

Stephane Tyc has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5463516
    Abstract: A transducer contains at least one layer of a composite material containing particles of a conducting magnetic material in a non-magnetic and insulating or semiconductor matrix material and two electrodes deposited on at least one face of the layer for measuring resistance of the layer.
    Type: Grant
    Filed: June 23, 1993
    Date of Patent: October 31, 1995
    Assignee: Thomson-Csf
    Inventors: Thierry Valet, Stephane Tyc
  • Patent number: 5313186
    Abstract: A sensor of weak magnetic fields with magnetoresistive effect features a metallic multilayer formed by alternating magnetic and non-magnetic metals. In order to detect weak fields, a sensor is described wherein a magnetic field is coupled by an anti-ferromagnetic type coupling with a first neighboring magnetic layer and by a ferromagnetic type coupling with a third neighboring magnetic layer, so that there is frustration of coupling. The first and third magnetic layers are blocked by their strong coercive field. The sensor finds particular application to detection on magnetic media.
    Type: Grant
    Filed: December 16, 1992
    Date of Patent: May 17, 1994
    Assignee: Thomson-CSF
    Inventors: Alain Schuhl, Stephane Tyc
  • Patent number: 5239187
    Abstract: Disclosed is a transistor or diode type Josephson effect device, at least two electrodes of which are made of superconductive material. If the Josephson effect is to be exerted in a semiconductor layer between the access electrodes, the distance between them should be smaller than the length of coherence, namely 10 to 1000 angstroms. According to the disclosure, the control channel between access electrodes is replaced by two channels perpendicular to the semiconductor layer, located between the two access electrodes and a layer of superconductive material placed between the substrate and the semiconductor layer. The disclosure can be applied to transistors, phototransistors and diodes with high switching speed.
    Type: Grant
    Filed: March 2, 1992
    Date of Patent: August 24, 1993
    Assignee: Thomson-CSF
    Inventors: Alain Schuhl, Stephane Tyc, Alain Friederich
  • Patent number: 5231295
    Abstract: A field-effect transistor comprises, on a substrate, a layer of semiconductor material incorporating natural or artificial inclusions of superconducting material. The source, drain and gate electrodes are made on this layer. Applications: field-effect transistors with low gate control voltage. FIG. 3.
    Type: Grant
    Filed: August 16, 1991
    Date of Patent: July 27, 1993
    Assignee: Thomson-CSF
    Inventors: Stephane Tyc, Alain Schuhl