Abstract: The portable pet water dispensing system is configured for use with a companion animal. The portable pet water dispensing system is configured for use in a vehicle. The vehicle further comprises a passenger seat. An example of a suitable vehicle includes, but is not limited to an automobile. The portable pet water dispensing system is a watering device. The portable pet water dispensing system provides a source of water for the companion animal as the companion animal is traveling in the vehicle. The companion animal controls when the water is dispensed. The portable pet water dispensing system table comprises a harness, a housing, and a sipper water structure. The harness attaches the housing to the passenger seat. The housing contains the sipper water structure. The sipper water structure dispenses the water to the companion animal.

Abstract: The decorative cover for a paper towel roll and holder is configured for use with a paper towel roll. The decorative cover for a paper towel roll and holder is placed over the paper towel roll for decorative purposes. The paper towel roll may be mounted on a paper towel holder. The decorative cover for a paper towel roll and holder comprises a cylinder, a top cap, and a slot. The cylinder is defined with a vertical face, a superior base, and an inferior base. The vertical face encloses the paper towel roll. The top cap encloses the superior base of the cylinder. The slot is an aperture formed in the vertical face. The free end of the paper towel roll is threaded through the slot such that paper towels may be drawn out of the paper towel roll without removing the decorative cover for a paper towel roll and holder.

Abstract: A method of forming a semiconductor device includes forming one or more sidewall spacer layers on the outer surface of a gate stack. At least one region of an at least partially formed semiconductor device is doped. First and second sidewall bodies are formed on opposing sides of the gate stack. The formation of the first and second sidewall bodies includes forming a first sidewall-forming layer on the outward surface of the gate stack and the sidewall spacer layers, exposing the semiconductor device to a heating cycle in a single wafer reactor, and forming a second sidewall-forming layer on the outward surface of the first sidewall-forming layer. The formation of the second sidewall-forming layer occurs in an environment that substantially minimizes dopant loss and deactivation in the at least one region of the partially formed semiconductor device.

Abstract: Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant as well as the implantation of at least two species effective at limiting junction broadening by channeling during dopant implantation and/or by thermal diffusion. Following dopant implantation, the electronically-active dopant is activated by thermal processing.