Abstract: A method for characterizing and simulating a CMP process, in which a substrate to be polished, in particular a semiconductor wafer, is pressed onto a polishing cloth and is rotated relative to the latter for a defined polishing time. The method includes defining a set of process parameters, in particular a compressive force and a relative rotational speed between a substrate and polishing cloth; preparing and characterizing a test substrate having test patterns with different structure densities using the defined process parameters; determining a set of model parameters for simulating the CMP process from results of the characterization of the test substrate; determining layout parameters of the substrate which is to be polished; defining a profile of demands for a CMP process result for the substrate to be polished; and simulating the CMP process in order to determine the polishing time required to satisfy the profile of demands.

Abstract: A method for characterizing and simulating a CMP process, in which a substrate to be polished, in particular a semiconductor wafer, is pressed onto a polishing cloth and is rotated relative to the latter for a defined polishing time. The method includes defining a set of process parameters, in particular a compressive force and a relative rotational speed between a substrate and polishing cloth; preparing and characterizing a test substrate having test patterns with different structure densities using the defined process parameters; determining a set of model parameters for simulating the CMP process from results of the characterization of the test substrate; determining layout parameters of the substrate which is to be polished; defining a profile of demands for a CMP process result for the substrate to be polished; and simulating the CMP process in order to determine the polishing time required to satisfy the profile of demands.

Abstract: A chemical mechanical polishing process rotates a wafer having an alignment mark at a wafer rotation rate and a polishing surface at an off-matched rotation rate. The wafer rotation rate and the off-matched rotation rate are not equal. The wafer rotating at the wafer rotation rate and the polishing surface rotating at the off-matched rotation rate touch to polish a plurality of points on the wafer. The rotation of the wafer rotating at the wafer rotation rate is adjusted with respect to the polishing surface rotating at the off-matched rotation rate to achieve an approximately zero averaged rotation rate velocity for each of the points on the wafer with respect to the polishing surface polishing the wafer upon a completion of the total polishing time.

Abstract: A chemical mechanical polishing process rotates a wafer having an alignment mark at a wafer rotation rate and a polishing surface at an off-matched rotation rate. The wafer rotation rate and the off-matched rotation rate are not equal. The wafer rotating at the wafer rotation rate and the polishing surface rotating at the off-matched rotation rate touch to polish a plurality of points on the wafer. The rotation of the wafer rotating at the wafer rotation rate is adjusted with respect to the polishing surface rotating at the off-matched rotation rate to achieve an approximately zero averaged rotation rate velocity for each of the points on the wafer with respect to the polishing surface polishing the wafer upon a completion of the total polishing time.