Abstract: This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.

Abstract: This disclosure describes a process of generating a planarizing polyimide based dielectric film on a substrate with conducting metal pattern, wherein the process comprised steps of: (a) providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer and at least one solvent; and (b) depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.

Abstract: This disclosure relates to a dielectric film-forming composition that includes (a) at least one cyanate ester compound, the at least one cyanate ester compound containing at least two cyanate groups; and (b) at least one dielectric polymer including a polybenzoxazoie precursor polymer, a polyimide precursor polymer, or a fully imidized polyimide polymer.

Abstract: This disclosure relates to a dielectric film forming composition that includes a plurality of (meth)acrylate containing compounds, at least one fully imidized polyimide polymer, and at least one solvent.

Abstract: This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.

Abstract: This disclosure describes a process of generating a planarizing polyimide based dielectric film on a substrate with conducting metal pattern, wherein the process comprised steps of: (a) providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer and at least one solvent; and (b) depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.

Abstract: The present disclosure relates to a process for forming a refined metal-containing unit by reducing yield impurities with acidified deionized water. Another embodiment is a composition comprising the refined metal-containing unit. Yet another embodiment is a process for forming a patterned substrate by depositing a composition comprising the refined metal-containing unit on a substrate, drying the film comprising the refined metal-containing unit, exposing the film comprising the refined metal-containing composition to a source of actinic radiation, and transferring the pattern to substrate. The disclosed embodiments are useful in producing patterned substrates by direct or indirect pattern transfer from films comprising the refined metal-containing unit.

Abstract: The present disclosure relates to a process for forming a refined metal-containing unit by reducing yield impurities with acidified deionized water. Another embodiment is a composition comprising the refined metal-containing unit. Yet another embodiment is a process for forming a patterned substrate by depositing a composition comprising the refined metal-containing unit on a substrate, drying the film comprising the refined metal-containing unit, exposing the film comprising the refined metal-containing composition to a source of actinic radiation, and transferring the pattern to substrate. The disclosed embodiments are useful in producing patterned substrates by direct or indirect pattern transfer from films comprising the refined metal-containing unit.

Abstract: A synthetic process comprising the following steps: providing a reaction mixture comprising: an ethylenically unsaturated anhydride monomer, at least one ethylenically unsaturated non-anhydride monomer, a free radical initiator, and an alkyl substituted THF solvent having the general structure of formula 1: where R1, R2, R3, and R4 are independently chosen from the group hydrogen and C1-C4 linear or branched alkyl with the proviso that at least one of R1, R2, R3, and R4 is not H; polymerizing the reaction mixture; and removing, by distillation, unreacted monomers, the alkyl substituted THF solvent, and any low boiling volatile reaction products.

Abstract: A photoresist composition comprising at least one acetal polymer having a silicon substituent; provided that the silicon substituent is not directly attached to the acetal functionality, thereby providing high resolution, improved DOF, and improved dimensional stability under metrology conditions.

Abstract: A synthetic process comprising the following steps: providing a reaction mixture comprising: an ethylenically unsaturated anhydride monomer, at least one ethylenically unsaturated non-anhydride monomer, a free radical initiator, and an alkyl substituted THF solvent having the general structure of formula 1: 1

Abstract: A photoresist composition comprising at least one acetal polymer having a silicon substituent; provided that the silicon substituent is not directly attached to the acetal functionality, thereby providing high resolution, improved DOF, and improved dimensional stability under metrology conditions.