Abstract: method of fabricating a sensor including a polymer body and a strain gauge including at least one Schottky junction. The Schottky junction includes an active layer including a piezoelectric semiconductor material, preferably with a wurtzite crystalline structure. The Schottky junction further including at least one metal electrode electrically connected to the active layer. The method including the following steps: forming a polymer layer, growing the at least one metal electrode on the polymer layer, then growing the active layer by atomic layer deposition, ALD, on the polymer layer and on the metal electrode. A sensor includes a polymer body and a cantilever including a strain gauge obtained by ALD. A gauge factor of 150 is achieved at different frequencies.

Abstract: A piezoelectric device comprising a transparent substrate; a transparent barrier layer on the substrate; a transparent piezoelectric layer on the transparent barrier layer; a transparent layer of interdigitated electrodes on the transparent piezoelectric layer; wherein the piezoelectric device further comprises a transparent dielectric layer at least on the portion of piezoelectric layer that is between successive fingers of the transparent layer of interdigitated electrodes, the transparent dielectric layer having a refractive index lower than a refractive index of the transparent layer of interdigitated electrodes and a dielectric strength superior to 3 MV/m.