Abstract: Methods and apparatus for novel routing structures and methods that improve fitting of user-defined functions onto programmable logic devices. In particular, second time fitting is improved. Exemplary structures and methods include allowing product terms to be expanded using inputs from more than one neighboring macrocell by providing multiple expansion and bypassing paths. Also, product term OR shifting prevents macrocell output stages from being buried and made inaccessible, and macrocell outputs are provided on expander word lines, increasing efficiency of those lines, as well as conserving routing resources. Expansion, bypassing, OR shifting, and expander word lines may terminate at logic array block boundaries or may continue beyond these boundaries to other logic array blocks.

Abstract: Integrated circuits are provided that have sensitive circuitry such as programmable polysilicon fuses. Electrostatic discharge (ESD) protection circuitry is provided that prevents damage or undesired programming of the sensitive circuitry in the presence of an electrostatic discharge event. The electrostatic discharge protection circuitry may have a power ESD device that limits the voltage level across the sensitive circuitry to a maximum voltage and that draws current away from the sensitive circuitry when exposed to ESD signals. The electrostatic discharge protection circuitry may also have an ESD margin circuit that helps to prevent current flow through the sensitive circuitry when the maximum voltage is applied across the sensitive circuitry.

Abstract: Techniques are provided for increasing flexibility to I/O banks with respect to supply voltages. Multiple supply voltages can be provided to a bank of I/O pins. Separate I/O pins residing in an I/O bank are driven by buffers that are coupled to different supply voltages. Dedicated I/O pins are driven by buffers with pre-selected supply voltages. The dedicated I/O pins can be grouped together into the same I/O bank providing greater flexibility to drive signals on I/O pins in other I/O banks at different voltages. Also, a dual mode input buffer can drive an input signal to a voltage determined by one of two possible supply voltage levels. In addition, power on reset circuits for an I/O bank can monitor the voltage of two or more supply voltages.

Abstract: Methods and apparatus for novel routing structures and methods that improve fitting of user-defined functions onto programmable logic devices. In particular, second time fitting is improved. Exemplary structures and methods include allowing product terms to be expanded using inputs from more than one neighboring macrocell by providing multiple expansion and bypassing paths. Also, product term OR shifting prevents macrocell output stages from being buried and made inaccessible, and macrocell outputs are provided on expander word lines, increasing efficiency of those lines, as well as conserving routing resources. Expansion, bypassing, OR shifting, and expander word lines may terminate at logic array block boundaries or may continue beyond these boundaries to other logic array blocks.

Abstract: Integrated circuits are provided that have sensitive circuitry such as programmable polysilicon fuses. Electrostatic discharge (ESD) protection circuitry is provided that prevents damage or undesired programming of the sensitive circuitry in the presence of an electrostatic discharge event. The electrostatic discharge protection circuitry may have a power ESD device that limits the voltage level across the sensitive circuitry to a maximum voltage and that draws current away from the sensitive circuitry when exposed to ESD signals. The electrostatic discharge protection circuitry may also have an ESD margin circuit that helps to prevent current flow through the sensitive circuitry when the maximum voltage is applied across the sensitive circuitry.

Abstract: Methods and apparatus for novel routing structures and methods that improve fitting of user-defined functions onto programmable logic devices. In particular, second time fitting is improved. Exemplary structures and methods include allowing product terms to be expanded using inputs from more than one neighboring macrocell by providing multiple expansion and bypassing paths. Also, product term OR shifting prevents macrocell output stages from being buried and made inaccessible, and macrocell outputs are provided on expander word lines, increasing efficiency of those lines, as well as conserving routing resources. Expansion, bypassing, OR shifting, and expander word lines may terminate at logic array block boundaries or may continue beyond these boundaries to other logic array blocks.

Abstract: Circuits may provide series on-chip termination impedance to one or more input/output pins. In one embodiment, two off-chip reference resistors in combination with internal calibration circuitry are used to control termination transistors coupled to several input/output (I/O) pins. The termination transistors behave as programmably adjustable termination resistors that match the impedance of external resistors. By using only a small number of reference resistors (e.g., 2 resistors) for a large number of I/O pins, the present invention eliminates the external components that would otherwise be needed to provide resistance termination. The effective series termination resistance may be programmed, enabling the termination resistance to meet different I/O standards. Further, the resistance termination techniques of the present invention are not sensitive to process, voltage supply, and temperature (PVT) variations.

Abstract: Charge pump circuits and methods of the present invention step up an input voltage to provide an output voltage. The charge pump circuits have one or more stages. Each stage may include a capacitor and a transistor. Each stage adds an incremental voltage to an input voltage. The capacitors elevate the voltage at a terminal of the transistors in each stage in response to a clock signal to provide the incremental voltage. The output voltage is the sum of the input voltage and the incremental voltages provided by each stage. One or more of the stages of the charge pump circuit may have a depletion transistor. Depletion transistors may be field-effect transistors that have a lower threshold voltage as a result of an implant in the channel region of the device.

Abstract: Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such that the voltage across their gate oxide is reduced. The charge pump of the present invention further provides circuitry to reduce leakage current.