Patents by Inventor Stephanus LOUWERS

Stephanus LOUWERS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micro-device having a metal-semiconductor compound layer protected against HF etching and method for making the same
    Patent number: 11027969
    Abstract: A micro-device including at least one first element comprising at least: a portion of material corresponding to a compound of at least one semi-conductor and at least one metal, first and second protective layers each covering one of two opposite faces of said portion of material, such that the first and second protective layers are in direct contact with said portion of material, that the first protective layer comprises at least one first material able to withstand an HF etching, that the second protective layer comprises at least one second material able to withstand the HF etching, and that at least one of the first and second materials able to withstand the HF etching includes the semi-conductor.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: June 8, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Stephanus Louwers
  • Reducing parasitic capacities in a microelectronic device
    Patent number: 11024795
    Abstract: A microelectronic device including a substrate including, in a stack, a base portion, a dielectric portion and an upper layer with a semi-conductive material base, at least one electrical connection element made of an electrically conductive material located above the upper layer and electrically insulated from the upper layer at least by a dielectric layer, the dielectric layer being in contact with the surface of the upper layer, at least one dielectric element including at least one trench forming a closed edge at the periphery or upright of at least one portion of the dielectric electrical connection element, located at least partially in the upper layer and delimiting a closed zone of said upper layer, at least one dielectric element having a portion exposed to the surface of the upper layer, device wherein the dielectric layer totally covers the exposed portion of at least one dielectric element.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: June 1, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Philippe Robert, Stephanus Louwers
  • REDUCING PARASITIC CAPACITIES IN A MICROELECTRONIC DEVICE
    Publication number: 20190312192
    Abstract: A microelectronic device including a substrate including, in a stack, a base portion, a dielectric portion and an upper layer with a semi-conductive material base, at least one electrical connection element made of an electrically conductive material located above the upper layer and electrically insulated from the upper layer at least by a dielectric layer, the dielectric layer being in contact with the surface of the upper layer, at least one dielectric element including at least one trench forming a closed edge at the periphery or upright of at least one portion of the dielectric electrical connection element, located at least partially in the upper layer and delimiting a closed zone of said upper layer, at least one dielectric element having a portion exposed to the surface of the upper layer, device wherein the dielectric layer totally covers the exposed portion of at least one dielectric element.
    Type: Application
    Filed: December 8, 2017
    Publication date: October 10, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Philippe ROBERT, Stephanus LOUWERS
  • MICRO-DEVICE INCLUDING AN ELEMENT PROTECTED AGAINST HF ETCHING AND FORMED BY A MATERIAL COMPRISING A SEMI-CONDUCTOR AND A METAL
    Publication number: 20190092632
    Abstract: A micro-device including at least one first element comprising at least: a portion of material corresponding to a compound of at least one semi-conductor and at least one metal, first and second protective layers each covering one of two opposite faces of said portion of material, such that the first and second protective layers are in direct contact with said portion of material, that the first protective layer comprises at least one first material able to withstand an HF etching, that the second protective layer comprises at least one second material able to withstand the HF etching, and that at least one of the first and second materials able to withstand the HF etching includes the semi-conductor.
    Type: Application
    Filed: September 21, 2018
    Publication date: March 28, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Stephanus LOUWERS