Abstract: A process for forming a very thin suspended layer of piezoelectric material of thickness less than 10 microns. The device is made from a combination of GaAs and AlGaAs layers to form either a sensor or an electronic filter. Onto a GaAs substrate is epitaxially deposited a thin (1-5 micron) sacrificial AlGaAs layer, followed by a thin GaAs top layer. In one embodiment the substrate is selectively etched away from below until the AlGaAs layer is reached. Then a second selective etch removes the sacrificial AlGaAs layer, that has acted here as an etch stop, leaving the thin suspended layer of piezoelectric GaAs. In another embodiment, a pattern of small openings is etched through the thin layer of GaAs on top of the device to expose the sacrificial AlGaAs layer. A second selective etch is done through these openings to remove the sacrificial AlGaAs layer, leaving the top GaAs layer suspended over the GaAs substrate.

Abstract: A monolithic optical tamper sensor, comprising an optical emitter and detector, connected by an optical waveguide and placed into the critical entry plane of an enclosed sensitive region, the tamper sensor having a myriad of scraps of a material optically absorbent at the wavelength of interest, such that when the absorbent material is in place on the waveguide, an unique optical signature can be recorded, but when entry is attempted into the enclosed sensitive region, the scraps of absorbent material will be displaced and the optical/electrical signature of the tamper sensor will change and that change can be recorded.