Abstract: A non-crosslinked biocompatible polymer is formed from a radical polymerisable ethylenically unsaturated zwitterionic monomer containing a sulpho-betaine zwitterionic group and a radical polymerisable ethylenically unsaturated comonomer containing a hydrophobic group selected from C6-24-alkyl, C1-24-fluoroalkyl and siloxane groups. Suitable copolymers are of N,N-dimethyl ammonium-N-propylsulphonate-N-ethyl methacrylate and dodecylmethacrylate. The polymer may be used to coat substrates to render them biocompatible, especially hemocompatible. The hydrophobic groups render the polymer particularly suitable for coating hydrophobic substrates.

Abstract: Polymers of one or more radical polymerisable monomers which polymer has pendant groups bearing a centre of permanent positive charge and other pendant groups capable of stably binding the polymer to a surface are useful in the treatment of surfaces to render them biocompatible. The polymers may contain pendant groups which bind the polymer to a surface by physisorption, covalent bonding or ionic interactions. Additionally reactive groups in the polymer may serve as points for attachment of ligands to the polymer when coated on a surface.

Abstract: Polymers of one or more radical polymerisable monomers which polymer has pendant groups bearing a centre of permanent positive charge and other pendant groups capable of stably binding the polymer to a surface are useful in the treatment of surfaces to render them biocompatible. The polymers may contain pendant groups which bind the polymer to a surface by physisorption, covalent bonding or ionic interactions. Additionally reactive groups in the polymer may serve as points for attachment of ligands to the polymer when coated on a surface.

Abstract: Polymers of one or more radical polymerisable monomers which polymer has pendant groups bearing a center of permanent positive charge and other pendant groups capable of stably binding the polymer to a surface are useful in the treatment of surfaces to render them biocompatible. The polymers may contain pendant groups which bind the polymer to a surface by physisorption, covalent bonding or ionic interactions. Additionally reactive groups in the polymer may serve as points for attachment of ligands to the polymer when coated on a surface.

Abstract: Polymers of one or more radical polymerisable monomers which polymer has pendant groups bearing a center of permanent positive charge and other pendant groups capable of stably binding the polymer to a surface are useful in the treatment of surfaces to render them biocompatible. The polymers may contain pendant groups which bind the polymer to a surface by physisorption, covalent bonding or ionic interactions. Additionally reactive groups in the polymer may serve as points for attachment of ligands to the polymer when coated on a surface.

Abstract: Polymers of one or more radical polymerizable monomers which polymer has pendant groups bearing a center of permanent positive charge and other pendant groups capable of stably binding the polymer to a surface are useful in the treatment of surfaces to render them biocompatible. The polymers may contain pendant groups which bind the polymer to a surface by physisorption, covalent bonding or ionic interactions. Additionally reactive groups in the polymer may serve as points for attachment of ligands to the polymer when coated on a surface.

Abstract: A process is provided for etching thermally grown oxide. The process involves various steps and specific etch processing parameters used within a parallel electrode reactor. There are pre-stabilizing steps, followed by an etch step, which is then followed by post-stabilizing steps. The post-stabilizing steps may further include a particle removal or byproduct flush step in addition to the post-stabilizing steps. The process parameters are chosen to remove thermal oxide within contact regions at a uniform rate. The resulting thermal oxide is substantially uniform with less than 3.0% variance in thickness across the contact regions and across like areas of the entire wafer surface. The unique combination of pre-stabilize, etch, post-stabilize steps and process parameters chosen for each step thereby provides an improved etch uniformity of thermal oxide films within fine-line areas.

Abstract: A process for the preparation of compounds of formula (I) in which Z is hydrogen or --NHZ is an activated amine group capable of reacting with a surface, the groups R are the same or different and each is a straight or branched C.sub.1 -C.sub.4 alkyl group, preferably methyl, n is from 2 to 6, and X is a straight or branched C.sub.1-20 alkylene group, or X is a group of formula --(CH.sub.2 CH.sub.2 O).sub.b --, or --(CH.sub.2).sub.c --Ar--(CH.sub.2).sub.d -- where b is from 1 to 20, c and d are the same or different and each is from 0 to 5, and Ar is a para- or meta- disubstituted phenyl group (preferably a para-disubstituted phenyl group) which is optionally further substituted by one or more C.sub.1 -C.sub.4 alkyl groups, or an acid addition salt thereof or a hydrate thereof, new compounds of formula (I) and salts and hydrates thereof and the use of compounds of formula (I) and salts and hydrates thereof in treating surfaces to render them more biocompatible.

Abstract: An SOG plasma etch process is presented which is optimized for selectivity to PECVD silicon nitride. The present process also produces a uniform etch across the exposed surface of a semiconductor wafer. The etch process finds utility in dielectric-SOG-dielectric structures used as passivation layers. Silicon nitride is deposited using a PECVD technique to form the dielectric layers. By etching SOG at a faster rate than the rate at which it etches PECVD silicon nitride, the SOG plasma etch process removes enough of the SOG layer to prevent delamination problems associated with SOG layers interposed between dielectric layers without significantly reducing the thickness of the first dielectric layer. SOG remains only in troughs between closely-spaced interconnects and adjacent to the vertical steps between widely-spaced interconnects. Flow rates of He, CHF.sub.3, and N.sub.2 gases are established through a reaction chamber of a plasma etch system.

Abstract: A process of treating suitable synthetic polymers comprising the steps of (a) where appropriate, activating the surface to be treated, and, if necessary, providing spacer groups thereon; and (b) treating the surface with a compound of Formula (I), ##STR1## wherein Y' is an alkylene group optionally containing an aryl group, a poly(ethylene glycol) or a glycerol group; R may be the same or different and each is a straight or branched C.sub.1-4 alkyl group, n is from 1 to 4 and X is a group which reacts with functional groups of the polymer. Polymeric surfaces and materials thus produced and shaped articles containing such surfaces and materials.

Abstract: A process for treating polymeric contact lenses comprising the steps of: (a) where necessary, activating the polymeric surface to be treated and (b) treating the surface with a compound of formula (I), wherein X is a group which reacts with the polymer surface; Y is straight or branched C.sub.1-6 alkylene; the groups R are the same or different and each is straight or branched C.sub.1-4 alkyl, and A.sup.- is a counterion.X--Y--CH.sub.2 N.sup..sym. R.sub.3 A.sup..crclbar.

Abstract: A hydrophilic crosslinkable copolymer comprising monomer units derived from an ester of an ethylenically unsaturated carboxylic acid wherein the ester group contains a labile primary hydroxyl group and monomer units derived from a halohydroxyalkyl ester of an ethylenically unsaturated carboxylic acid is disclosed. The copolymer is useful in affinity separation systems.