Abstract: A wind-resistant shingle and a method of making it is provided in which the rear surface of the shingle is provided with an attached reinforcement layer, which resists upwardly wind-applied bending torque when the shingle is installed on a roof, such that the failure of the shingle when it is bent beyond its elastic limit, is resisted until the shingle has absorbed a high percentage of applied torque.

Abstract: A starter strip shingle of a given vertical width is provided, having a severance line, from which a severance portion of the starter strip shingle may be removed, somewhat reducing the vertical width of the starter strip shingle, such that the installer of roofing material has an option to use full width starter strip shingles, or reduced width starter strip shingles, from the same package of uniform width starter strip shingles, to thereby enable a feathering of roofing shingles applied thereover, by means of a gentle transition zone, to avoid tears and punctures of the roofing shingles. Sealant areas on the starter strip shingles may be synchronized with the spacing and sizes of tabs of roofing shingles applied thereover, such that the sealant areas will always be under tabs of roofing shingles that are applied thereover, and not fall between the tabs into slots thereof.

Abstract: A wind-resistant shingle and a method of making it is provided in which the rear surface of the shingle is provided with an attached reinforcement layer, which resists upwardly wind-applied bending torque when the shingle is installed on a roof, such that the failure of the shingle when it is bent beyond its elastic limit, is resisted until the shingle has absorbed a high percentage of applied torque.

Abstract: A wind-resistant shingle and a method of making it is provided in which the rear surface of the shingle is provided with an attached reinforcement layer, which resists upwardly wind-applied bending torque when the shingle is installed on a roof, such that the failure of the shingle when it is bent beyond its elastic limit, is resisted until the shingle has absorbed a high percentage of applied torque.

Abstract: A method and apparatus are provided in an array built in self test (ABIST) environment formed on a semiconductor chip having an array of memory cells arranged in columns and rows and column and row redundant lines which includes testing the array along the columns to identify a given number of faulty cells in each of the columns, storing the column addresses having the given number of faulty cells in first registers, further testing the array along the columns or rows to identify any additional faulty cells while masking the cells having the stored column addresses and storing the row addresses having the faulty cell in second registers until all of the second registers store row addresses, and after all of the second registers store row addresses, continue testing the array while masking the cells having the stored column or row addresses and storing the column addresses of any remaining additional faulty cell in any unused register of the first registers.

Abstract: An Array Built-In Self Test (ABIST) circuit places on-chip circuits such as memory arrays in a known state, then stops. In the alternative, the ABIST circuit may initialize to a particular subcycle within a pattern sequence, and repeatedly loop on the subcycle, or repeatedly loop on the entire pattern sequence.

Abstract: A method and apparatus are provided in an array built in self test (ABIST) environment formed on a semiconductor chip having an array of memory cells arranged in columns and rows and column and row redundant lines which includes testing the array along the columns to identify a given number of faulty cells in each of the columns, storing the column addresses having the given number of faulty cells in first registers, further testing the array along the columns or rows to identify any additional faulty cells while masking the cells having the stored column addresses and storing the row addresses having the faulty cell in second registers until all of the second registers store row addresses, and after all of the second registers store row addresses, continue testing the array while masking the cells having the stored column or row addresses and storing the column addresses of any remaining additional faulty cell in any unused register of the first registers.

Abstract: An ABIST circuit for testing a memory array has a blanket write subcycle (WC), an RC3 subcycle, and an RC4 subcycle. The ABIST circuit includes a programmable pattern generator that provides eight programmable data bits, eight programmable read/write bits, and two programmable address frequency bits to determine the specific test patterns applied to the memory array. The address frequency bits determine how many memory cycles will be performed on each cell of the memory array. In X1 mode, only one memory cycle is performed on each cell during any given subcycle. In X2 mode, two memory cycles are performed on each cell, allowing a cell to be written, then subsequently read in the same subcycle. In X4 mode, four memory cycles are performed on each cell, and in X8 mode, all eight bits of read/write and data are used on each cell, resulting in eight memory cycles for each cell within the memory array.

Abstract: The present invention provides a device for testing memory having write cycles and read cycles. A BIST state machine changes the data applied to the memory's DI port during read cycles to a value different from that of the data stored in the currently addressed memory location. The BIST-generated expect data also is at a different value from that of data at the memory's DI port and at the same value as the data stored at the current memory address location during read operations. With this arrangement, flush through defects can be detected which would not have been detectable by prior BIST machines.

Abstract: An ABIST circuit for testing a memory array has a blanket write subcycle (WC), an RC.sub.3 subcycle, and an RC.sub.4 subcycle. The ABIST circuit includes a programmable pattern generator that provides eight programmable data bits, eight programmable read/write bits, and two programmable address frequency bits to determine the specific test patterns applied to the memory array. The address frequency bits determine how many memory cycles will be performed on each cell of the memory array. In X1 mode, only one memory cycle is performed on each cell during any given subcycle. In X2 mode, two memory cycles are performed on each cell, allowing a cell to be written, then subsequently read in the same subcycle, In X4 mode, four memory cycles are performed on each cell, and in Xg mode, all eight bits of read/write and data are used on each cell, resulting in eight memory cycles for each cell within the memory array.

Abstract: A method and circuit are provided to detect if any bit stored in a given location in a memory is different from the data expected. The circuit includes logic to read each of the bits stored in the cells at given locations from memory and to generate a fail signal based on the data expected to be stored if the stored data is different from the expected data. The circuit also preferably includes logic to compare the True data and expect data read from each cell and generating the fail signal if they are the same. Additional logic circuitry is also preferably provided which determines if a node of the circuit remains in a precharged condition.

Abstract: A test method and structure is provided to determine the end count of a predetermined succession or series of binary numbers wherein one number and its relation in the succession to the end count number is known. The structure includes a circuit for generating a binary digit output and a device for storing at least a portion of the said one number which preferably is the penultimate number in a sequential series. A succession of binary numbers is generated as output of the circuit. the outputted numbers are compared to the portion of the stored number. A READY signal is outputted when the stored number compares with the outputted number. On a subsequent cycle, a control signal is generated when the generated number following the READY signal corresponds to the end count number. The inventor also contemplates programmable end count numbers.

Abstract: An associated memory structure having a plurality of memories amenable for testing and a method of testing the memories is provided. First and second memories are formed, wherein data in the first memory provides a basis for at least a portion of the input to the second memory during functional operation of two memories. Preferably, an output latch for receiving the output test data from the first memory is provided. Means are provided for loading the first memory with data which is utilized as a basis for providing at least a portion of the input to the second memory. An access path from the output port of the first memory to the input port of the second memory allows use of the data in the first memory to generate at least a portion of the input to the second memory. The first memory is first tested independently of the second memory. Thereafter, the first memory is loaded with preconditioned data that is used as a basis for inputs to the second memory during testing of the second memory.