Abstract: A semiconductor radiation detector (1?, 1?, 1??, 1??) includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).

Abstract: A CdZnTe photon counting detector includes a core material of Cd1-xZnxTe, where (0?x<1), an anode terminal on one side of the core material and a cathode terminal on a side of the core material opposite the anode terminal. At least one of the following is selected in the design of the detector as a function of the maximum sustainable photon flux the core material is able to absorb in operation while avoiding polarization of the core material: electron lifetime-mobility product of the core material; de-trapping time of the core material; a value of a DC bias voltage applied between the anode and the cathode; a temperature of the core material in operation; a mean photon flux density to be absorbed by the core material in operation; and a thickness of the core material between the anode and the cathode.

Abstract: A semiconductor radiation detector (1?, 1?, 1??, 1??) includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).

Abstract: A CdZnTe photon counting detector includes a core material of Cd1-xZnxTe, where (0?x<1), an anode terminal on one side of the core material and a cathode terminal on a side of the core material opposite the anode terminal. At least one of the following is selected in the design of the detector as a function of the maximum sustainable photon flux the core material is able to absorb in operation while avoiding polarization of the core material: electron lifetime-mobility product of the core material; de-trapping time of the core material; a value of a DC bias voltage applied between the anode and the cathode; a temperature of the core material in operation; a mean photon flux density to be absorbed by the core material in operation; and a thickness of the core material between the anode and the cathode.