Abstract: A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned.

Abstract: A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned. The invention overcomes the problem of self-aligned high resistance source/drain contacts and a high resistance gate electrode for submicron FET devices which increase as devices are scaled to smaller dimensions.

Abstract: A field effect transistor and method for making the same is described wherein the field effect transistor incorporates a T-shaped gate and source and drain contacts self-aligned with preexisting shallow junction regions. The present invention provides a low resistance gate electrode and self-aligned low resistance source/drain contacts suitable for submicron FET devices, and scalable to smaller device dimensions.