Patents by Inventor Stephen B. Robie

Stephen B. Robie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of depositing copper using physical vapor deposition
    Patent number: 9728414
    Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: August 8, 2017
    Assignee: Cypress Semiconductor Corporation
    Inventors: Wen Yu, Stephen B. Robie, Jeremias D. Romero
  • METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION
    Publication number: 20140377948
    Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 25, 2014
    Inventors: Wen YU, Stephen B. ROBIE, Jeremias D. ROMERO
  • METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION
    Publication number: 20140377949
    Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.
    Type: Application
    Filed: June 25, 2014
    Publication date: December 25, 2014
    Inventors: Wen YU, Stephen B. ROBIE, Jeremias D. ROMERO
  • Method of depositing copper using physical vapor deposition
    Patent number: 8791018
    Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.
    Type: Grant
    Filed: December 19, 2006
    Date of Patent: July 29, 2014
    Assignee: Spansion LLC
    Inventors: Wen Yu, Stephen B. Robie, Jeremias D. Romero
  • Method of depositing copper using physical vapor deposition
    Publication number: 20080146028
    Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.
    Type: Application
    Filed: December 19, 2006
    Publication date: June 19, 2008
    Inventors: Wen Yu, Stephen B. Robie, Jeremias D. Romero