Abstract: A protective window shutter is designed to cover and uncover a door mounted “peek through” metal framed window. The shutter is made up of two shutter sections, rotatable in relation to each other. The first shutter section is secured adjacent to the window's metal frame and the second shutter section is rotatable from a first position in which the two sections are folded on each other, to a second position in which the second section is extended out from the first section, over the window. The shutter sections are maintained in the closed position by the attraction of metal strike plates on the first shutter section and corresponding magnets encased within the second shutter. The second section is maintained over the window by the attraction of the magnets to the window's metal framing. The shutter sections are made of high strength, lightweight PVC or like material.

Abstract: A protective window shutter is designed to cover and uncover a door mounted “peek through” metal framed window. The shutter is made up of two shutter sections, rotatable in relation to each other, The first shutter section is secured adjacent to the window's metal frame and the second shutter section is rotatable from a first position in which the two sections are folded on each other, to a second position in which the second section is extended out from the first section, over the window. The shutter sections are maintained in the closed position by the attraction of metal strike plates on the first shutter section and corresponding magnets encased within the second shutter. The second section is maintained over the window by the attraction of the magnets to the window's metal framing. The shutter sections are made of high strength, lightweight PVC or like material.

Abstract: In a slurry solution for chemical mechanical planarization (CMP) of a semiconductor wafer, an abrasive particle is provided having a central body and a plurality of extensions from the central body of the abrasive particle. The plurality of extension hold a center of mass of the abrasive particle a distance from the semiconductor wafer during the CMP process. The extensions extend 3-dimensionally from the central body, with the length of one extension being about 30 nm. The extensions reduce attractive forces acting on the central body allowing the abrasive particles to be removed from the semiconductor wafer during a post-CMP cleaning process.

Abstract: In a slurry solution for chemical mechanical planarization (CMP) of a semiconductor wafer, an abrasive particle is provided having a central body and a plurality of extensions from the central body of the abrasive particle. The plurality of extension hold a center of mass of the abrasive particle a distance from the semiconductor wafer during the CMP process. The extensions extend 3-dimensionally from the central body, with the length of one extension being about 30 nm. The extensions reduce attractive forces acting on the central body allowing the abrasive particles to be removed from the semiconductor wafer during a post-CMP cleaning process.