Abstract: A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: A system for the removal of heat stable amine salts from an amine absorbent used in a carbon dioxide (CO2) capture process.

Abstract: A semiconductor structure can include a substrate and a substrate layer. The substrate can be formed of silicon and the substrate layer can be formed of silicon germanium. Above the substrate and under the substrate layer there can be provided a multilayer substructure. The multilayer substructure can include a first layer and a second layer. The first layer can be formed of a first material and the second layer can be formed of second material. A method can include forming a multilayer substructure on a substrate, annealing the multilayer substructure, and forming a substrate layer on the multilayer substructure.

Abstract: A system for the removal of heat stable amine salts from an amine absorbent used in a carbon dioxide (CO2) capture process.

Abstract: A solar cell includes a p-type semiconductor substrate including a plurality of thin absorption regions and a plurality of thick absorption regions. The plurality of thin absorption regions and the plurality of thick absorption regions are coplanar on a bottom side thereof. An n-type semiconductor layer is disposed over a top side of the p-type semiconductor substrate. The n-type semiconductor layer has a substantially uniform thickness. Metallurgy is disposed on top of the n-type semiconductor layer. The plurality of thin absorption regions are sufficiently thin to render the semiconductor substrate flexible.

Abstract: The present disclosure describes the efficient use of a catalyst, an enzyme for example, to provide suitable real cyclic capacity to a solvent otherwise limited by its ability to absorb and maintain a high concentration of CO2 captured from flue gas. This invention can apply to non-promoted as well as promoted solvents and to solvents with a broad range of enthalpy of reaction.

Abstract: The present invention relates to making tetra-sulfo iron-phthalocyanine by reacting sulfonated reactant(s) in the presence a boron-containing promoter. The present invention also relates to making tetra-sulfo iron phthalocyanine more tolerant to oxygen by combining the tetra-sulfo iron-phthalocyanine with a stabilizing amount of a complexing agent (e.g., a stabilizing amine) and/or contacting the tetra-sulfo iron-phthalocyanine with steam.

Abstract: A composition for removing mercaptan from a gas stream containing at least one acid gas in addition to a mercaptan, the composition comprising a physical and/or chemical solvent for H2S and an inclusion compound for the mercaptan. A process of treating gas stream using the composition. The inclusion compound is selected from the group consisting of, cyclodextrin, cryptand, calixarene, cucurbituril. The chemical solvent may be monoethanolamine (MEA), diethanolamine (DEA), triethanolamine (TEA, diisopropylamine (DIPA), diglycolamine (DGA) and methyldiethanolamine (MDEA). Examples of useful physical solvents include cyclotetramethylene sulfone (sulfolane) and its derivatives, aliphatic acid amides, NMP (n-methylpyrrolidone), N-alkylated pyrrolidones and corresponding piperidone, methanol and mixtures of dialkethers of polyethylene glycols. The method comprises scrubbing preferably the natural gas with an aqueous solution comprising the above compounds followed by a stripping regeneration step.

Abstract: A composition for removing mercaptan from a gas stream containing at least one acid gas in addition to a mercaptan, the composition comprising a physical and/or chemical solvent for H2S and an inclusion compound for the mercaptan. A process of treating gas stream using the composition. The inclusion compound is selected from the group consisting of, cyclodextrin, cryptand, calixarene, cucurbituril. The chemical solvent may be monoethanolamine (MEA), diethanolamine (DEA), triethanolamine (TEA, diisopropylamine (DIPA), diglycolamine (DGA) and methyldiethanolamine (MDEA). Examples of useful physical solvents include cyclotetramethylene sulfone (sulfolane) and its derivatives, aliphatic acid amides, NMP (n-methylpyrrolidone), N-alkylated pyrrolidones and corresponding piperidone, methanol and mixtures of dialkethers of polyethylene glycols. The method copirses scrubbing preferably the natural gas with an aqueous solution comprising the above compounds followed by a stripping regeneration step.

Abstract: Acid gas purification processes for reducing nitrosamine precursor formation from a gas stream containing NOx, wherein the acid gas is selectively absorbed in an amine based wash solution comprising at least one secondary diamine. The processes generally include absorbing carbon dioxide from the gas stream containing NOx species with the amine-based wash solution comprising at least one secondary diamine to provide a carbon dioxide lean gas stream that is released into the surroundings, wherein absorbing the acid gas forms a rich amine solution; and regenerating the rich amine solution at an elevated temperature to release the carbon dioxide to form a regenerated lean amine solution, wherein absorbing and regenerating are configured to promote formation of carbamate species of at least one diamine.

Abstract: The proposed invention relates to a method and a system for the removal of heat stable amine salts from an amine absorbent used in a carbon dioxide (CO2) capture process, the method comprising: withdrawing amine absorbent containing heat stable amine salts from the CO2 capture process; subjecting the withdrawn amine absorbent containing heat stable amine salts to a residual CO2 removal step; subjecting the amine absorbent from the residual CO2 removal step to a separation step to separate heat stable amine salts from the amine absorbent; and returning the amine absorbent having a reduced concentration of heat stable amine salts to the CO2 capture process.

Abstract: Systems and process for volatile degradation removal from amine plant wash water are provided. The systems and processes include a separation device disposed within a water circulation loop and configured to continuously remove at least a portion of the volatile degradation products from the wash solutions. The separation device can be configured for stripping, distillation, and/or extraction of the volatile degradation products from at least a fraction of the spent wash water. Optionally, a chemical agent can be reacted with the volatile degradation products to form heat stable salts for subsequent removal.

Abstract: The present disclosure describes the efficient use of a catalyst, an enzyme for example, to provide suitable real cyclic capacity to a solvent otherwise limited by its ability to absorb and maintain a high concentration of CO2 captured from flue gas. This invention can apply to non-promoted as well as promoted solvents and to solvents with a broad range of enthalpy of reaction.

Abstract: A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.

Abstract: A composition for removing mercaptan from a gas stream containing at least one acid gas in addition to a mercaptan, the composition comprising a physical and/or chemical solvent for H2S and an inclusion compound for the mercaptan. A process of treating gas stream using the composition. The inclusion compound is selected from the group consisting of, cyclodextrin, cryptand, calixarene. cucurbituril. The chemical solvent may be monoethanolamine (MEA), diethanolamine (DEA), triethanolamine (TEA, diisopropylamine (DIPA), diglycolamine (DGA) and methyldiethanolamine (MDEA). Examples of useful physical solvents include cyclotetramethylene sulfone (sulfolane) and its derivatives, aliphatic acid amides, NMP (n-methylpyrrolidone), N-alkylated pyrrolidones and corresponding piperidone methanol and mixtures of dialkethers of polyethylene glycols. The method copirses scrubbing preferably the natural gas with an aqueous solution comprising the above compounds followed by a stripping regeneration step.

Abstract: A structural low carbon steel in combination with and in contact with an aqueous MDEA solvent that includes as an amine-based chemical additive. When mixed with MDEA solvent to form a MDEA solution, the MDEA-based solution in contact with carbon steel reduces the corrosion rate of low carbon structural carbon steels having a carbon content greater than about 0.18% by weight is significantly reduced when the concentrations of CO2, O2 and heat stable salts (HSS) are controlled below critical amounts. The MDEA solution, when controlling the concentrations of CO2, O2 and HSS below critical amounts, suppresses the corrosion of carbon steel having a carbon content greater than about 0.18%. A smooth surface finish further suppresses the corrosion of the low carbon structural steel. When the CO2, O2 and HSS are maintained below critical values, a low carbon structural steel having a micropolished surface finish displayed improved corrosion resistance.