Abstract: Apparatus are provided for integrated circuits that include circuitry to provide protection from electrostatic discharge. An exemplary integrated circuit includes an input/output terminal, a first transistor coupled to the input/output terminal, a second transistor coupled to a control terminal of the first transistor and a reference voltage node, and detection circuitry coupled to a control terminal of the second transistor. The detection circuitry is configured to turn on the second transistor in response to a discharge event to protect the first transistor.

Abstract: A method for fabricating a semiconductor device is provided. According to this method, a first gate electrode and a second gate electrode are formed overlying a first portion of a silicon substrate, and ions of a first conductivity-type are implanted into a second portion of the silicon substrate to define a first conductivity-type diode region within the silicon substrate. Ions of a second conductivity-type are implanted into a third portion of the silicon substrate to define a second conductivity-type diode region within the silicon substrate. During one of the steps of implanting ions of the first conductivity-type and implanting ions of the second conductivity-type, ions are also implanted into at least part of the first portion to define a separation region within the first portion. The separation region splits the first portion into a first well device region and a second well device region. The separation region is formed in series between the first well device region and the second well device region.

Abstract: Method and apparatus for cellular and intracellular manipulation of cell functions with ultrashort electrical pulses and for targeted delivery of the electrical pulses into cell cultures, patients, and tissues.

Abstract: Methods and devices are provided for protecting semiconductor devices against electrostatic discharge events. An electrostatic discharge protection device comprises a silicon substrate, a P+-type anode region disposed within the silicon substrate, and an N-well device region disposed within the silicon substrate in series with the P+-type anode region. A first P-well device region is disposed within the silicon substrate in series with the first N-well device region and an N+-type cathode region is disposed within the silicon substrate. A gate electrode is disposed at least substantially overlying the first N-well and P-well device regions of the silicon substrate.

Abstract: Method and apparatus for cellular and intracellular manipulation of cell functions with ultrashort electrical pulses and for targeted delivery of the electrical pulses into cell cultures, patients, and tissues.

Abstract: A method for fabricating a semiconductor device is provided. According to this method, a first gate electrode and a second gate electrode are formed overlying a first portion of a silicon substrate, and ions of a first conductivity-type are implanted into a second portion of the silicon substrate to define a first conductivity-type diode region within the silicon substrate. Ions of a second conductivity-type are implanted into a third portion of the silicon substrate to define a second conductivity-type diode region within the silicon substrate. During one of the steps of implanting ions of the first conductivity-type and implanting ions of the second conductivity-type, ions are also implanted into at least part of the first portion to define a separation region within the first portion. The separation region splits the first portion into a first well device region and a second well device region. The separation region is formed in series between the first well device region and the second well device region.

Abstract: Methods and devices are provided for protecting semiconductor devices against electrostatic discharge events. An electrostatic discharge protection device comprises a silicon substrate, a P+-type anode region disposed within the silicon substrate, and an N-well device region disposed within the silicon substrate in series with the P+-type anode region. A first P-well device region is disposed within the silicon substrate in series with the first N-well device region and an N+-type cathode region is disposed within the silicon substrate. A gate electrode is disposed at least substantially overlying the first N-well and P-well device regions of the silicon substrate.

Abstract: A method and apparatus are provided for delivering an agent into a cell through the application of nanosecond pulse electric fields (“nsPEF's”). The method includes circuitry for delivery of an agent into a cell via known methods followed by the application of nanosecond pulse electric fields to said cell in order to facilitate entry of the agent into the nucleus of the cell. In a preferred embodiment, the present invention is directed to a method of enhancing gene expression in a cell comprising the application of nanosecond pulse electric fields to said cell. An apparatus for generating long and short pulses according to the present invention is also provided. The apparatus includes a pulse generator capable of producing a first pulse having a long duration and low voltage amplitude and a second pulse having a short duration and high voltage amplitude.

Abstract: Methods for inducing calcium mobilization in cells through the application of nanosecond pulsed electric fields (“nsPEFs”) are provided. The invention also provides a method of increasing intracellular calcium in cells through the application of nsPEFs. In one embodiment of the invention, the cells are human platelets, whereby activation and aggregation of the platelets is induced. Methods for treating an injury, trauma, or loss of blood in a subject, through the application of nsPEFs are also provided.