Abstract: A jig for aiding in securing a fascia board on the downwardly extended ends of a row of eaves of a frame of a building being constructed including a U shaped member and an angle bracket with an angle bracket with one leg swivelly attached to an end of one leg of the U shaped member. Two jigs are used for temporarily supporting the board across the ends of the row of eaves permitting that the board be nailed to the ends of the eaves. The jig is preferably made of resiliently flexible polycarbonate so that the jig can be twisted when required to enable aligning of the board in a required direction.

Abstract: A MOSFET device is formed on a P- doped semiconductor substrate with an N- well formed therein, with a pair of isolation regions formed in the N- well with a gate oxide layer formed above the N- well. An FET device is formed with source and drain regions within the N-well, and a gate electrode formed above the gate oxide layer aligned with the source and drain regions. The gate electrode comprises a stack of layers. A polysilicon layer is formed on the gate oxide layer. A tungsten nitride dopant barrier layer is formed upon the polysilicon layer having a thickness of from about 5 nm to about 20 nm, and a tungsten silicide layer is formed upon the tungsten nitride layer.

Abstract: Method and apparatus for continuously casting metal strip. Molten metal is introduced between a pair of parallel chilled casting rolls (16) via an elongate metal delivery nozzle (18) disposed above and extending along the nip between the casting rolls (16) to form a casting pool (68) supported on the rolls and contra-rotating the rolls to produce a solidified strip (20). The molten metal is delivered into a trough (67) of the nozzle (18) through an entry nozzle (18) having an upper inlet end for receiving molten metal from a tundish, and a lower outlet end (84) extending into trough (61) of the delivery nozzle (19). The outlet end (84) of entry nozzle (18) has a bottom wall (86), elongate side walls (88) spaced inwardly from the side walls (62) of the delivery nozzle (19) and outlets (92) for molten metal in the side walls (88).

Abstract: The method of the present invention fabricates a plurality of composite structures so as to permit the reliable recovery of leads embedded within respective ones of the composite or smart structures. In this regard, the method of the present invention permits a plurality of composite structures to be fabricated, such as by means of a continuous pultrusion process, while enabling the leads to be recovered without interrupting the pultrusion process and without damaging the resulting composite structures. Correspondingly, a composite structure is provided according to the present invention which has a protective sleeve surrounding the portion of the lead which extends through the end of the composite body. As such, the protective sleeve protects the lead during the fabrication process by protecting the lead during the separation of the composite structures and the recovery of the embedded lead.

Abstract: A method and the device produced by the method of selective refractory metal growth/deposition on exposed silicon, but not on the field oxide is disclosed. The method includes preconditioning a wafer in a DHF dip followed by the steps of 1) selectively depositing a refractory metal on the exposed surfaces of the silicon substrate by reacting a refractory metal halide with the exposed surfaces of said silicon substrate; 2) limiting silicon substrate consumption by reacting the refractory metal halide with a silicon containing gas; and 3) further increasing the refractory metal thickness by reacting the refractory metal halide with hydrogen. Through an adequate pretreatment and selection of the parameters of 1) temperature; 2) pressure; 3) time; 4) flow and 5) flow ratio during each of the deposition steps, this invention adequately addresses the difficulties of uneven n+ versus p+ (source/drain) growth, deep consumption/encroachment by the refractory metal into silicon regions (e.g.

Abstract: A structure is provided that includes a structural element and a composite carrier assembly associated with the structural element, such as by being embedded therein, wherein the compatible carrier assembly includes a composite carrier and a sensor disposed with the composite carrier. By embedding the composite carrier assembly within a structural element, the sensor, such as a fiber optic sensor, will measure the conditions, such as the strain, temperature or the like, to which at least a portion of the structural element is subjected in a manner which averages the measurements over a distance greater than the predetermined dimensions of the sensor element. In addition, the thermal, mechanical and electrical characteristics of the composite carrier can be precisely tailored, such as to match those characteristics of the structural element in which the composite carrier is to be embedded, so that the composite carrier will be compatible with the host material of the structural element.

Abstract: A silver catalyst for ethylene oxidation to ethylene oxide is provided containing a promoter combination consisting of an alkali metal component, a sulfur component, and a lanthanide component, the catalyst being essentially free of rhenium and transition metal components; optionally the catalyst contains a fluorine component.

Abstract: A silver catalyst for ethylene oxidation to ethylene oxide is provided containing a promoter combination consisting of an alkali metal component, a sulfur component, a germanium or tin component, and a fluorine component the catalyst being essentially free of rhenium and transition metal compounds.

Abstract: A MOSFET device is formed on a P- doped semiconductor substrate with an N- well formed therein, with a pair of isolation regions formed in the N- well with a gate oxide layer formed above the N- well. An FET device is formed with source and drain regions within the N-well, and a gate electrode formed above the gate oxide layer aligned with the source and drain regions. The gate electrode comprises a stack of layers. A polysilicon layer is formed on the gate oxide layer. A tungsten nitride dopant barrier layer is formed upon the polysilicon layer having a thickness of from about 5 nm to about 20 nm, and a tungsten silicide layer is formed upon the tungsten nitride layer.

Abstract: A silver catalyst for ethylene oxidation to ethylene oxide is provided containing a promoter combination consisting of an alkali metal component, a sulfur component, a fluorine component, and a pnictogen component from the group phosphorus, bismuth and antimony; the catalyst is essentially free of rhenium and transition metal components.

Abstract: A metal delivery nozzle (19) for delivery of molten metal to the nip between casting rolls in a twin roll caster to establish a casting pool supported above the nip. The trough (19) defines an open topped trough (61) to receive molten metal from a distributor. The bottom of the trough (61) is closed and the nozzle has side openings (64) and two large end openings (71) for delivery of molten metal from the trough (61) into the casting pool. The side openings (64) are longitudinally spaced circular holes disposed between unperforated end regions (72) of the nozzle.

Abstract: A silver catalyst for ethylene oxidation to ethylene oxide is provided containing a promoter combination consisting of an alkali metal component, a sulfur component, a germanium or tin component, and a fluorine component the catalyst being essentially free of rhenium and transition metal compounds.

Abstract: A method and the device produced by the method of selective refractory metal growth/deposition on exposed silicon, but not on the field oxide is disclosed. The method includes preconditioning a wafer in a DHF dip followed by the steps of 1) selectively depositing a refractory metal on the exposed surfaces of the silicon substrate by reacting a refractory metal halide with the exposed surfaces of said silicon substrate; 2) limiting silicon substrate consumption by reacting the refractory metal halide with a silicon containing gas; and 3) further increasing the refractory metal thickness by reacting the refractory metal halide with hydrogen. Through an adequate pretreatment and selection of the parameters of 1) temperature; 2) pressure; 3) time; 4) flow and 5) flow ratio during each of the deposition steps, this invention adequately addresses the difficulties of uneven n+ versus p+ (source/drain) growth, deep consumption/encroachment by the refractory metal into silicon regions (e.g.

Abstract: A method of cementing a production casing in a borehole having a surface casing therein wherein cement is pumped down through the production casing thereby cementing the production casing into the borehole and the surface casing. Prior to pumping a special production casing section carrying a tubular expandable resilient bladder is installed in the production casing. The bladder has flanges at either end and slots passing through the flanges. The bladder has an internal thread at one end which mates with an external thread on the casing section thereby anchoring the bladder. The other end of the bladder is free. When installed there is clearance between the bladder and the surrounding surface casing. This permits the bladder to expand upwardly when cement is pumped through and when there is a sufficient head of cement after pumping the bladder collapses and provides a good seal between the production casing section and the surface casing section.

Abstract: An apparatus for dissolving a gas in a liquid employs means for determining the alpha factor of said liquid or a parameter related thereto and control means to control the pumping rate of liquid through the apparatus in response thereto thereby maintaining the gas to liquid flow volume fraction and hence the gas dissolution efficiency within desired limits.

Abstract: A structure and method is described for securing an overspray shield in processing chambers in the wall sandwich of the chamber or using a dimensionally compliant floating spacer ring to elastically clamp the overspray shield in position in a vacuum substrate processing chamber without the use of removable fasteners. The configuration uses the differential pressures between the inside and outside of the chamber to clamp the overspray shield along with its shield clamping assembly components at a spacer position in the chamber. The spacer position is generally interior to vacuum sealing limits of the chamber. The arrangement is such that if misalignment occurs a good vacuum-type seal cannot be achieved unless the parts are moved to correct alignment. When correctly aligned the overspray shield is tightly held to the processing chamber wall and electrical continuity between the processing chamber wall and the overspray shield is assured throughout expected process conditions.

Abstract: A method of constructing vibrator devices particularly adapted for producing and applying vibratory forces to bodies or test bodies for any measuring or any testing purposes by using cavitating spaces within fluids within housings which are driven by piezoelectric drivers to thereby produce supersonic shock-wave vibratory forces which are coupled by any gas interfaces or any liquid interfaces or any solid interfaces to bodies or test bodies is presently disclosed.