Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.