Abstract: A method for checking for reliability problems includes simulating a circuit having at least one MOS transistor that includes a first MOS transistor. Based on the results of this simulation of the circuit, a gate-to-bulk voltage (Vgb) for the first MOS transistor is calculated. A voltage limit based on the length of the channel of the first MOS transistor is selected. If Vgb is greater than the voltage limit, a warning message is generated.

Abstract: An integrated circuit having an n-channel MOSFET device and a JFET device. The integrated circuit includes a semiconductor layer having an upper surface, an MOS transistor device formed in a doped well of a first conductivity type extending from the semiconductor upper surface and a JFET device. The JFET device includes a channel region in the semiconductor layer spaced from, and having a peak concentration positioned a predetermined distance below, the upper surface. An associated method of manufacturing includes introducing p-type dopant into the semiconductor surface to form a p-well in which the NMOS device is formed and a source and a drain of the JFET device. N-type dopant is introduced into the semiconductor surface to form an n-type region of the NMOS device below the p-well and a gate region of the JFET device.

Abstract: A (e.g., hard-disk drive (HD)) system supports reader standby mode and/or writer standby mode. For reader standby mode, reader circuitry in the system's preamplifier is transitioned to a low-power mode during write operations. To provide quick transition from write mode to read mode, the reader circuitry is transitioned to pre-read mode before the end of the write operation. For writer standby mode, the preamplifier's writer circuitry is transitioned to a low-power mode during read operations. To provide quick transition from read mode to write mode, the writer circuitry is transitioned to a pre-write mode before the end of the read operation. The availability of a reader standby mode during write operations and a writer standby mode during read operations reduces power consumption as compared to HD systems that leave the reader circuitry in pre-read mode throughout each write operation and the writer circuitry in pre-write mode throughout each read operation.

Abstract: A (e.g., hard-disk drive (HD)) system supports reader standby mode and/or writer standby mode. For reader standby mode, reader circuitry in the system's preamplifier is transitioned to a low-power mode during write operations. To provide quick transition from write mode to read mode, the reader circuitry is transitioned to pre-read mode before the end of the write operation. For writer standby mode, the preamplifier's writer circuitry is transitioned to a low-power mode during read operations. To provide quick transition from read mode to write mode, the writer circuitry is transitioned to a pre-write mode before the end of the read operation. The availability of a reader standby mode during write operations and a writer standby mode during read operations reduces power consumption as compared to HD systems that leave the reader circuitry in pre-read mode throughout each write operation and the writer circuitry in pre-write mode throughout each read operation.

Abstract: The present invention provides a semiconductor device including large topography alignment marks, and a method of manufacture therefor. The method of manufacturing the semiconductor device includes forming an isolation trench and an alignment mark in a substrate to a substantially common depth, and forming an etch stop layer in the alignment mark.

Abstract: The memory element of the present invention utilizes a substrate, a first conductive connection, a second conductive connection, and an ionic layer. The substrate includes a source region, a drain region, and a channel region, which is disposed between the source region and the drain region. The ionic layer includes ions and is coupled to the substrate. The first connection is coupled to the source region, and the second connection is coupled to the drain region. An electrical field is applied through said ionic layer such that the ions in the ionic layer move. When the memory element is to exhibit a logical high state, the polarity of the electrical field causes the ions to move toward the channel region. This pulls the electrons in the source and drain regions into the channel region making the channel region conductive. When the memory element is to exhibit a logical low state, the polarity of the electrical field causes the ions to move away from the channel region.

Abstract: During formation of shallow-trench isolation (STI) structures during semiconductor processing, an additional oxide-reduction etching step is performed prior to chemical-mechanical processing. In one implementation wet-etching and/or sputter etch-back (SEB) is performed prior to applying a reverse-tone mask. In another implementation a wet etching step is performed after the reverse-tone mask is stripped. One significant result of each of these steps is a reduction in the height and width of at least some of the oxide horns that remain after the reverse-tone mask is stripped. As such, the oxide structures that need to be planarized during CMP will be smaller than those of the prior art. Moreover, since the resulting oxide structures that need to be planarized by CMP processing are smaller, the oxide layer can be initially applied at a smaller thickness than that of the prior art.