Abstract: A flexible, capacitive touch sensor, and a method of manufacturing a plurality of such touch sensors, are provided. The capacitive touch sensor comprises a thin, flexible, transparent, insulating substrate. A thin, flexible, transparent layer of resistive material is applied to one side of the substrate, and a thin, flexible, transparent, pressure-sensitive layer of adhesive material is applied to the substrate's other side. A releasable sheet may cover this adhesive layer. A plurality of thin, flexible electrodes, electrical leads and conductive areas are applied to the resistive layer. A thin, flexible, transparent layer of protective material protects the touch sensor's active touch area. Compounds may be added to this protective layer to enhance its conductivity and lubricity. A reel-to-reel process for manufacturing a plurality of such capacitive touch sensors also is described.

Abstract: A method and apparatus for improving uniformity of the rate of removal of material from the surface of a workpiece, such as semiconductor substrate, by polishing. In accordance with the invention, the workpiece is subjected to a vibratory polishing method, and optionally at least one additional polishing motion selected from rotational, oscillating, sweeping, orbital and linear polishing motions. As a result, polished workpieces, such as semiconductor wafers, have reduced surface defects, improved planarity, and are polished more uniformly over a wider area.

Abstract: An abrasive free wafer polishing device utilizing an abrasive free chemical solution includes a workpiece fixture (11), a brush assembly (12) and a high flow rate fluid dispenser (13). The fluid dispenser (13) dispenses an abrasive free chemical solution to an interface at which the workpiece and the brush assembly come into contact with a flow rate of at least 50 ml/min. The abrasive free chemical solution and brush assembly (12) operate to chemically react with a metal (e.g. copper) on the workpiece and abrade away the reacted copper during a polishing process.

Abstract: A sealed insulated glass unit is provided with an electrochromic device for modulating light passing through the unit. The electrochromic device is controlled from outside the unit by a remote control electrically unconnected to the device. Circuitry within the unit may be magnetically controlled from outside. The electrochromic device is powered by a photovoltaic cells. The photovoltaic cells may be positioned so that at least a part of the light incident on the cell passes through the electrochromic device, providing a form of feedback control. A variable resistance placed in parallel with the electrochromic element is used to control the response of the electrochromic element to changes in output of the photovoltaic cell.

Abstract: Lithium is sputtered from a target with a metallic lithium surface using an alternating sputtering potential with a frequency between about 8 and about 120 kHz, preferably about 10-100 kHz or using a DC sputtering potential and a reverse cleaning potential applied intermittently. The process can be used to apply lithium to electrochromic materials such as coatings on window glass.

Abstract: Electrochromic devices are disclosed in which the counterelectrode layer is a gamma phase Li.sub.x V.sub.2 O.sub.5 layer in which x is between about 0.7 and 2.0. In addition, methods of producing electrochromic devices are disclosed including such counterelectrode layers which are heat treated at temperatures of greater than about 260.degree. C. to convert the counterelectrode layer into such a gamma phase Li.sub.x V.sub.2 O.sub.5 layer.

Abstract: Lithium is sputtered from a target with a metallic lithium surface using an alternating sputtering potential with a frequency between about 8 and about 120 kHz, preferably about 10-100 kHz. The process can be used to apply lithium to electrochromic materials such as coatings on window glass.

Abstract: An elongated anode structure having multiple points to which electrons are attracted is provided. The anode can be constructed of multiple wire brushes that are attached to a metal rod. Use of the anode in magnetron systems significantly reduces dielectric material build-up and improves film uniformity in both dc reactive and non-reactive sputtering. Moreover, the anode reduces overheating and increases the operation time of magnetron systems undergoing reactive sputtering of dielectric materials. In one embodiment, the magnetron system has a cylindrical cathode and a pair of elongated anodes positioned parallel to and equidistance from the cathode. The anode structure is particularly suited for sputtering uniform films of dielectric materials, including silicon dioxide and silicon nitride.

Abstract: In one group of embodiments, two or more small anodes are spaced apart from one another in a magnetron, with some aspect of their electrical power being individually controlled in a manner to control a density profile across a plasma. In another group of embodiments, the same effect is obtained by mechanically moving one or more small anodes or anode masks. When used in a magnetron having either a rotating cylindrical cathode or a stationary planar cathode and designed to sputter films of material onto a substrate, the uniformity of the rate of deposition across the substrate is improved. Also, adverse effects of sputtering dielectric materials are reduced.

Abstract: Low transparency, or colored, copper oxide is taught as a new electrochromic material, in combination with a metallic oxide. The material is formed by application of the copper oxide to a substrate followed by application of the metallic oxide. A low-E glass substrate is heated, and cupric acetylacetonate powder is sprayed at the glass; the cupric acetylacetonate powder is atomized with dry oxygen. The glass/SN.sub.N O.sub.2 F/Cu.sub.x O system is then re-heated. After reheating, tungsten hexachloride dissolved in N,N-dimethyl formamide is sprayed at the copper oxide on the substrate. In a sample material, visible transmission is improved from 33% for copper oxide alone, to 65%.

Abstract: An elongated anode structure having multiple points to which electrons are attracted is provided. The anode can be constructed of multiple wire brushes that are attached to a metal rod. Use of the anode in magnetron systems significantly reduces dielectric material build-up and improves film uniformity in both dc reactive and non-reactive sputtering. Moreover, the anode reduces overheating and increases the operation time of magnetron systems undergoing reactive sputtering of dielectric materials. In one embodiment, the magnetron system has a cylindrical cathode and a pair of elongated anodes positioned parallel to and equidistance from the cathode. The anode structure is particularly suited for sputtering uniform films of dielectric materials, including silicon dioxide and silicon nitride.

Abstract: A pyrolitic deposition process, for pyrolitic deposition of organo-cupric powder to form copper oxide film, is improved. A substrate is heated, and organocupric powder is sprayed at the substrate, using oxygen gas as the carrier gas. Up to one-third greater deposition rate results, as compared to the process using compressed air as the carrier gas.