Abstract: A probe for a scanning probe microscope includes a cantilever having a length defined between a free end and a base end. The base end is connected to a support. The free end includes a sharp tip, and is free to oscillate at a selected frequency. The probe also includes a knife-edge structure that is positioned adjacent to the cantilever and perpendicular to the length of the cantilever. The knife edge inhibits the cantilever from vibrating at a first-order resonant frequency of the cantilever, and instead encourages the cantilever to vibrate at third or higher order resonant frequencies.

Abstract: A scanning probe microscope is used to fabricate a gate or other feature of a transistor by scanning a silicon substrate in which the transistor is to be formed. An electric field is created between the cantilever tip and the silicon substrate, thereby causing an oxide layer to be formed on the surface of the substrate. As the tip is scanned across the substrate the electric field is switched on and off so that an oxide pattern is formed on the silicon. Preferably, the oxide pattern is formed on a deposited layer of amorphous silicon. Extremely small features, e.g., a MOSFET gate having a length of 0.2 .mu.m or less can be fabricated by this technique.

Abstract: A cantilever for a scanning probe microscope (SPM) includes a piezoelectric element in a thicker, less flexible section near the fixed base of the cantilever and a piezoresistor in a thinner, more flexible section near the free end of the cantilever. When the SPM operates in the constant force mode, the piezoelectric element is used to control the tip-sample separation. Since the resonant frequency of the piezoelectric element is substantially higher than that of conventional piezoelectric tube scanners, much higher scan rates can be achieved. When the SPM operates in the dynamic or intermittent contact mode, a superimposed AD-DC signal is applied to the piezoelectric element, and the latter is used to vibrate the cantilever as well as to control the tip-sample spacing. In another embodiment the cantilever is supported on a knife edge and vibrates at a third or higher order resonant frequency.

Abstract: A cantilever for a scanning probe microscope (SPM) includes a piezoelectric element in a thicker, less flexible section near the fixed base of the cantilever and a piezoresistor in a thinner, more flexible section near the free end of the cantilever. When the SPM operates in the constant force mode, the piezoelectric element is used to control the tip-sample separation. Since the resonant frequency of the piezoelectric element is substantially higher than that of conventional piezoelectric tube scanners, much higher scan rates can be achieved. When the SPM operates in the dynamic or intermittent contact mode, a superimposed AD-DC signal is applied to the piezoelectric element, and the latter is used to vibrate the cantilever as well as to control the tip-sample spacing. In another embodiment the cantilever is supported on a knife edge and vibrates at a third or higher order resonant frequency.

Abstract: A lithography system includes a plurality of cantilevers, preferably formed in a silicon wafer. Each cantilever includes a tip located near the free end of the cantilever and an electrical conduction path which extends along the length of the cantilever to the tip. A switch is included in the conduction path to control the voltage at the tip of the cantilever.The array of such cantilevers is positioned adjacent a wafer which is to be patterned, in the manner of an atomic force microscope operating in either the contact or noncontact mode. The cantilever array is scanned over the wafer, preferably in a raster pattern, and the individual switches are operated so as to control an electric current or electric field at the tip of each cantilever. The electric current or field is used to write a pattern on a layer of resist coating the wafer or on the surface of the wafer itself.