Abstract: Embedded die packaging for semiconductor power switching devices, wherein the package comprises a laminated body comprising a layer stack of a plurality of dielectric layers and conductive metal layers. A thermal contact area on a back-side of the die is attached to a leadframe. A patterned layer of conductive metallization on a front-side of the die provides electrical contact areas of the power semiconductor device. Before embedding, a protective dielectric layer is provided on the front-side of the die, extending around edges of the die. The protective dielectric layer provides a protective region that acts a cushion to protect edges of the die from damage during lamination. The protective dielectric material may extend over the electrical contact areas to protect against etch damage and damage during laser drilling of vias, thereby mitigating physical damage, overheating or other potential damage to the active region of the semiconductor device.

Abstract: The invention relates to inclusion of one or more sugars or isolated sugars in a smoking article.

Abstract: There are provided 5,6-dihydro-4H-dithieno[3,2-b:2?,3?-d]azepine derivatives(as defined in the disclosure) which are useful in the treatment of RSV infection and for the prevention of disease associated with RSV infection.

Abstract: There is provided a 5,6-dihydro-4H-benzo[b]thieno-[2,3-d]azepine derivative which is useful in the treatment of respiratory syncytial virus (RSV) infection and for the prevention of disease associated with RSV infection. (Formula (I)).

Abstract: There is provided a 5,6-dihydro-4H-benzo[b]thieno-[2,3-d]azepine derivative which is useful in the treatment of respiratory syncytial virus (RSV) infection and for the prevention of disease associated with RSV infection. (Formula (I)).

Abstract: There is provided a 5,6-dihydro-4H-benzo[b]thieno-[2,3-d]azepine derivative which is useful in the treatment of respiratory syncytial virus (RSV) infection and for the prevention of disease associated with RSV infection. (Formula (1)).

Abstract: There are provided 5,6-dihydro-4H-dithieno[3,2-b:2?,3?-d]azepine derivatives (as defined in the disclosure) which are useful in the treatment of RSV infection and for the prevention of disease associated with RSV infection.

Abstract: There are provided 5,6-dihydro-4H-benzo[b]thieno-[2,3-d]azepine derivatives which are useful in the treatment of respiratory syncytial virus (RSV) infection and for the prevention of disease associated with RSV infection.

Abstract: There are provided inter alia compounds which are intended to treat or prevent respiratory syncytial virus infections and associated disease particularly infections caused by the A and B strains thereof.

Abstract: The invention relates to method of treating a material containing nicotine and at least one nitrosamine to reduce the quantity of nitrosamine therein and to methods of producing a tobacco extract with reduced nitrosamine content. The methods comprise contacting tobacco with a solvent to produce a liquid phase tobacco extract containing nitrosamines and treating the liquid phase tobacco extract to decompose the nitrosamines in the liquid phase. The liquid phase extract may then be treated to reduce nitrosamine decomposition products therein. The invention also relates to tobacco material produced using these methods and to tobacco products incorporating such tobacco material.

Abstract: There are provided 5,6-dihydro-4H-benzo[b]thieno-[2,3-d]azepine derivatives which are useful in the treatment of respiratory syncytial virus (RSV) infection and for the prevention of disease associated with RSV infection.

Abstract: There are provided inter alia compounds which are intended to treat or prevent respiratory syncytial virus infections and associated disease particularly infections caused by the A and B strains thereof.

Abstract: Packaging solutions for devices and systems comprising lateral GaN power transistors are disclosed, including components of a packaging assembly, a semiconductor device structure, and a method of fabrication thereof. In the packaging assembly, a GaN die, comprising one or more lateral GaN power transistors, is sandwiched between first and second leadframe layers, and interconnected using low inductance interconnections, without wirebonding. For thermal dissipation, the dual leadframe package assembly can be configured for either front-side or back-side cooling. Preferred embodiments facilitate alignment and registration of high current/low inductance interconnects for lateral GaN devices, in which contact areas or pads for source, drain and gate contacts are provided on the front-side of the GaN die.

Abstract: Packaging solutions for devices and systems comprising lateral GaN power transistors are disclosed, including components of a packaging assembly, a semiconductor device structure, and a method of fabrication thereof. In the packaging assembly, a GaN die, comprising one or more lateral GaN power transistors, is sandwiched between first and second leadframe layers, and interconnected using low inductance interconnections, without wirebonding. For thermal dissipation, the dual leadframe package assembly can be configured for either front-side or back-side cooling. Preferred embodiments facilitate alignment and registration of high current/low inductance interconnects for lateral GaN devices, in which contact areas or pads for source, drain and gate contacts are provided on the front-side of the GaN die.

Abstract: A high temperature industrial furnace roof system having first and second spaced apart hanger brick rows with a filler row disposed therebetween and a cable system including a plurality of electrical cables. The filler row includes a plurality of filler elements having at least one removable heating module with a heat source. The cable system operatively connects the heat source with a power source and permits the removable heating module to be removed from the respective filler element while the respective heat source remains operatively connected with the power source.

Abstract: Recombinant production of immunogenic West Nile Virus (WNV) proteins is described. These proteins, heterodimers comprising the proteins, fusions thereof, polynucleotides encoding the proteins, and combinations thereof, as well as antibodies produced therefrom, can be used in immunogenic compositions for preventing, treating and diagnosing WNV infection. Also described are highly sensitive ELISA and strip immunoassay methods for detecting the presence of WNV in biological samples.

Abstract: This invention relates to an industrial furnace roof filler element to allow replacement of a failed heat source during operation. The filler element can include a lower portion, a module, an aperture, a protuberance, a bore and/or a heat source. This invention also relates to a method of operation for an industrial furnace wherein a failed heat source is replaced during operation of the industrial furnace.

Abstract: A high temperature industrial furnace roof system having first and second spaced apart hanger brick rows with a filler row disposed therebetween and a cable system including a plurality of electrical cables. The filler row includes a plurality of filler elements having at least one removable heating module with a heat source. The cable system operatively connects the heat source with a power source and permits the removable heating module to be removed from the respective filler element while the respective heat source remains operatively connected with the power source.

Abstract: A transient blocking unit (TBU) is a transistor circuit that is normally on, but rapidly and automatically switches to a high-resistance current blocking state when a current threshold is exceeded, thereby protecting a series connected load from over-voltage or over-current conditions. Process variation of transistor threshold voltage and on-resistance can cause undesirable variation of the TBU threshold current and/or of TBU resistance. Control of TBU threshold current and/or resistance is improved by providing for trimming the TBU during its fabrication to provide a one-time adjustment of the threshold current or resistance. Such trimming can be done with a resistive trimming circuit placed in series with the on-resistance of the relevant TBU transistor. Alternatively, a segmented TBU transistor having an on-resistance that is adjustable by way of wire bonding during fabrication can be employed.