Abstract: A method and apparatus for cooling a semiconductor chamber are described herein. A semiconductor chamber component, includes a powered region, a grounded region, and a fluid conduit disposed within the semiconductor chamber component and passing through the powered region and grounded region, the fluid conduit comprising a ceramic material.

Abstract: Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

Abstract: Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

Abstract: Semiconductor substrate support assemblies may include an electrostatic chuck body having a substrate support surface. The electrostatic chuck body may define a plurality of protrusions extending from the substrate support surface. The assemblies may include an electrode embedded within the electrostatic chuck body. The electrode may define apertures through the electrode in line with the plurality of protrusions extending from the substrate support surface.

Abstract: Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

Abstract: A soil analysis device is configured to create a soil sample solution. The device includes a reservoir configured to store an extractant, a mixing chamber coupled to the reservoir and configured to receive extractant from the reservoir and to receive a raw soil sample, and a control system. The control system is configured to determine an amount of extractant needed to produce, from the raw soil sample, a soil sample solution with a particular soil-to-extractant ratio and configured to cause the determined amount of extractant to be transferred from the reservoir to the mixing chamber.

Abstract: A soil analysis device is configured to create a soil sample solution. The device includes a reservoir configured to store an extractant, a mixing chamber coupled to the reservoir and configured to receive extractant from the reservoir and to receive a raw soil sample, and a control system. The control system is configured to determine an amount of extractant needed to produce, from the raw soil sample, a soil sample solution with a particular soil-to-extractant ratio and configured to cause the determined amount of extractant to be transferred from the reservoir to the mixing chamber.

Abstract: A soil analysis device is configured to create a soil sample solution. The device includes a reservoir configured to store an extractant, a mixing chamber coupled to the reservoir and configured to receive extractant from the reservoir and to receive a raw soil sample, and a control system. The control system is configured to determine an amount of extractant needed to produce, from the raw soil sample, a soil sample solution with a particular soil-to-extractant ratio and configured to cause the determined amount of extractant to be transferred from the reservoir to the mixing chamber.

Abstract: A soil analysis device is configured to create a soil sample solution. The device includes a reservoir configured to store an extractant, a mixing chamber coupled to the reservoir and configured to receive extractant from the reservoir and to receive a raw soil sample, and a control system. The control system is configured to determine an amount of extractant needed to produce, from the raw soil sample, a soil sample solution with a particular soil-to-extractant ratio and configured to cause the determined amount of extractant to be transferred from the reservoir to the mixing chamber.

Abstract: A soil analysis device is configured to create a soil sample solution. The device includes a reservoir configured to store an extractant, a mixing chamber coupled to the reservoir and configured to receive extractant from the reservoir and to receive a raw soil sample, and a control system. The control system is configured to determine an amount of extractant needed to produce, from the raw soil sample, a soil sample solution with a particular soil-to-extractant ratio and configured to cause the determined amount of extractant to be transferred from the reservoir to the mixing chamber.

Abstract: A soil analysis device is configured to create a soil sample solution. The device includes a reservoir configured to store an extractant, a mixing chamber coupled to the reservoir and configured to receive extractant from the reservoir and to receive a raw soil sample, and a control system. The control system is configured to determine an amount of extractant needed to produce, from the raw soil sample, a soil sample solution with a particular soil-to-extractant ratio and configured to cause the determined amount of extractant to be transferred from the reservoir to the mixing chamber.