Abstract: An optical sensor and airborne pathogen proliferation assembly for remote, optical detection and monitoring of pathogens is disclosed.

Abstract: An inspection device is provided which comprises a receiving member defining an open cell for receiving a target therein. An optical excitation input is in optical communication with the cell for exciting the target. At least one acoustic pickup is in acoustic communication with the cell for picking up acoustic energy resultant from excitation of the target. A recorder is provided for recording the acoustic energy picked up from the at least one acoustic pickup for facilitating structural analysis of the target.

Abstract: A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.

Abstract: An optical sensor and airborne pathogen proliferation assembly for remote, optical detection and monitoring of pathogens is disclosed.

Abstract: A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.

Abstract: A method and apparatus for sterilizing an article. The method comprises placing an article in a sterilization container, generating oxidizing plasma radicals at atmospheric pressure, and providing the oxidizing plasma radicals to the sterilization container to sterilize the article in the container.

Abstract: An inspection device is provided which comprises a receiving member defining an open cell for receiving a target therein. An optical excitation input is in optical communication with the cell for exciting the target. At least one acoustic pickup is in acoustic communication with the cell for picking up acoustic energy resultant from excitation of the target. A recorder is provided for recording the acoustic energy picked up from the at least one acoustic pickup for facilitating structural analysis of the target.

Abstract: A method and apparatus for sterilising an article. The method comprises placing an article in a sterilisation container, generating oxidizing plasma radicals at atmospheric pressure, and providing the oxidizing plasma radicals to the sterilisation container to sterilise the article in the container.

Abstract: A solid substrate coating capable of swelling by a factor of at least 2 on contact with an aqueous solution. The solid substrate coating may be prepared by activating the surface of a solid substrate by treatment with a plasma, depositing a first layer of siloxane onto the surface of the solid substrate using plasma, and depositing a second layer of at least on chemical functionality on top of the first layer using plasma.

Abstract: A plasma system (1) has a circuit including a DC source (6), a power supply line (9), an electrodes (2, 3), and a return line (18). A perturbation signal source (8) delivers a perturbation signal into the circuit in addition to DC voltage from the DC source (6). Acquisition (10) and analysis (11) systems measure response to the perturbation. The analysis system (11) measures variation in impedance of the circuit and phase between voltage and current in the circuit. It also uses a frequency domain reflectrometry technique to measure signal reflection modulus of a supply line of the circuit over a defined frequency range.

Abstract: A system for analysing plasma. The system comprises at least one sensor which is co-operable with a plasma source for providing an analog signal representative of a characteristic of plasma from the plasma source, and a sound card installed on a computing means in communication with the sensor for converting the analog signal into a digital signal for facilitating digital processing thereof.

Abstract: Method and apparatus for measuring process parameters of a plasma etch process. A method for detecting at least one process parameter of a plasma etch process being performed on a semiconductor wafer. The method comprises the steps of detecting light being generated from the plasma during the etch process, filtering the detected light to extract modulated light; and processing the detected modulated light to determine at least one process parameter of the etch process.

Abstract: A plasma system (1) has a circuit including a DC source (6), a power supply line (9), an electrodes (2, 3), and a return line (18). A perturbation signal source (8) delivers a perturbation signal into the circuit in addition to DC voltage from the DC source (6). Acquisition (10) and analysis (11) systems measure response to the perturbation. The analysis system (11) measures variation in impedance of the circuit and phase between voltage and current in the circuit. It also uses a frequency domain reflectrometry technique to measure signal reflection modulus of a supply line of the circuit over a defined frequency range.

Abstract: A method of fault identification in a plasma process powered by an RF source comprises initially determining, in respect of a given baseline plasma process, the changes in magnitude of a plurality of Fourier components of the RF source resulting from changes in a plurality of the process input parameters from their baseline values. These magnitude changes are stored as reference data. During a subsequent production run, the plasma process is monitored for faults and if one is found the baseline process is repeated with input parameter values nominally the same as the original baseline values. The changes in the Fourier components from the original baseline values are determined and compared with the reference data to determine which input parameter(s) have changed.

Abstract: A decompression bubble detector comprises a pulsed ultra-sound transmitter/receiver which is scanned across a cross-section of tissue and the total number of pulse echoes received in a preselected time interval is recorded. Changes in the total number of pulse echoes recorded in successive time intervals are used to monitor the decompression. A single transducer is scanned by means of a driven eccentric cam and a cam follower. A sin/cos potentiometer generates a signal related to the angular position of the transducer connected to a delay so that pulse counting can be arranged to coincide with the passage of the transducer across the target.