Abstract: A macro cell includes one or more vertical die interconnects that vertically span the macro cell to transmit a data signal. The macro cell also includes one or more isolation features configured to manage a power of the macro cell by controlling a transmission of the data signal. Additionally, the macro cell includes one or more flip-flops configured to control a timing of the transmission of the data signal through the one or more vertical die interconnects. Various other apparatuses and systems are also disclosed.

Abstract: An exemplary apparatus includes a through-silicon via (TSV) and circuit that protects against the antenna effect and electrostatic discharge (ESD). The circuit can include a plurality of transistors whose gates are each electrically coupled to a signal that passes through the TSV. Various other apparatuses, systems, and methods are also disclosed.

Abstract: A macro cell includes one or more vertical die interconnects that vertically span the macro cell to transmit a data signal. The macro cell also includes one or more isolation features configured to manage a power of the macro cell by controlling a transmission of the data signal. Additionally, the macro cell includes one or more flip-flops configured to control a timing of the transmission of the data signal through the one or more vertical die interconnects. Various other apparatuses and systems are also disclosed.

Abstract: A method for power field effect transistor control can include configuring one or more input power networks to supply power to a plurality of field effect transistors. The method can also include configuring one or more gated output power networks to receive gated power from the plurality of field effect transistors. The method can further include configuring the plurality of field effect transistors to receive a pulse width modulated control signal and to gate the supplied power in response to the pulse width modulated control signal. Various other methods and systems are also disclosed.

Abstract: An integrated circuit die includes a set of electronic circuits disposed on a semiconductor material. The integrated circuit die also includes one or more through-silicon vias that vertically span the semiconductor material to transmit data signals. Additionally, the integrated circuit die includes a programmable delay element integrated with the set of electronic circuits on the semiconductor material and configured to delay data signals. Various other apparatuses, systems, and methods are also disclosed.

Abstract: A bonded die assembly includes first conductive pads of a first substrate each bonded to respective second conductive pads of a second substrate, the first and second conductive pads arrayed at an inter-pad spacing, a plurality of active components located in the second substrate and arrayed at an inter-component spacing, and a metallization structure disposed between the first substrate and the second substrate, where the metallization structure is configured to decrease the inter-component spacing relative to the inter-pad spacing. The die assembly is characterized by an improved utilization of available device active area.

Abstract: A method for controlling power in 3D stacked die can include configuring a first die of a set of 3D stacked die to receive power from a power source, wherein the first die includes one or more field effect transistors configured to control the power. The method can also include configuring one or more power domains included in a second die of the set of 3D stacked die to receive the power that is controlled by the one or more field effect transistors included in the first die. Various other methods and systems are also disclosed.

Abstract: An exemplary apparatus includes a through-silicon via (TSV) and circuit that protects against the antenna effect and electrostatic discharge (ESD). The circuit can include a plurality of transistors whose gates are each electrically coupled to a signal that passes through the TSV. Various other apparatuses, systems, and methods are also disclosed.