Abstract: A tag can receive first and second wireless signals respectively defining first and second transmission fields that overlap. When the tag moves from the first field to the second field through the region of overlap, the apparatus transitions only once from recognizing the tag is in the first field to recognizing the tag is in the second field. According to another aspect, first and second signposts are supported at spaced locations in the region of a crane, and respectively transmit first and second wireless signals that are different, and that respectively define first and second fields of transmission. According to yet another aspect, a signpost transmits wireless signals having a transmission field, and a system senses positional information regarding a tag movable relative to the signpost, the system using the positional information to determine a location of the tag in relation to the transmission field.

Abstract: A tag can receive first and second wireless signals respectively defining first and second transmission fields that overlap. When the tag moves from the first field to the second field through the region of overlap, the apparatus transitions only once from recognizing the tag is in the first field to recognizing the tag is in the second field. According to another aspect, first and second signposts are supported at spaced locations in the region of a crane, and respectively transmit first and second wireless signals that are different, and that respectively define first and second fields of transmission. According to yet another aspect, a signpost transmits wireless signals having a transmission field, and a system senses positional information regarding a tag movable relative to the signpost, the system using the positional information to determine a location of the tag in relation to the transmission field.

Abstract: In one embodiment, a system for delivering radio frequency (RF) power to a plasma processing system includes an automatic impedance matching network configured to receive RF power from an RF generator, and a fixed impedance matching network coupled between the automatic impedance matching network and the plasma processing chamber. The fixed impedance matching network may be configured to transform a first impedance presented by the chamber to a second impedance that allows the automatic impedance matching network to operate within a tuning range.

Abstract: In one embodiment, an absorptive filter network is provided between an RF generator and a semiconductor processing reactor. The absorptive filter network includes an absorptive filter circuit which allows energies at a fundamental frequency to pass while absorbing energies at frequencies away from the fundamental frequency. An absorptive filter circuit is located on the reactor-side of the absorptive filter network to isolate the RF generator from the effects of the non-linear loading presented by a plasma in the reactor. Another absorptive filter circuit is located on the RF generator-side of the absorptive filter network to present a stable voltage waveform to the plasma.

Abstract: An improved vacuum variable capacitor can include one or more characteristics that provide advantages over previous vacuum variable capacitors. In particular, the vacuum variable capacitor can be constructed so as to enable the capacitance to be adjusted more easily, reduce parasitic electrical characteristics that degrade the performance of the vacuum variable capacitor, increase the strength of the capacitor plates of the vacuum variable capacitor, reduce the size of the vacuum variable capacitor, and/or make the shape of the vacuum variable capacitor more easily integrated into a system of which the vacuum variable capacitor is part.

Abstract: In one embodiment, an absorptive filter network is provided between an RF generator and a semiconductor processing reactor. The absorptive filter network includes an absorptive filter circuit which allows energies at a fundamental frequency to pass while absorbing energies at frequencies away from the fundamental frequency. An absorptive filter circuit is located on the reactor-side of the absorptive filter network to isolate the RF generator from the effects of the non-linear loading presented by a plasma in the reactor. Another absorptive filter circuit is located on the RF generator-side of the absorptive filter network to present a stable voltage waveform to the plasma. The absorptive filter network thus minimizes variations in the RF power, and helps prevent fabrication processes from shifting. For applications requiring variable frequency RF power, a filter network having a dissipating circuit is used to minimize RF power variations.

Abstract: Plasma processing is accomplished with an improved single electrode reactor apparatus. High and low frequency power supplies are coupled to the single electrode to provide increased process flexibility, control and residue removal. A multi-stage passive filter network is disclosed which performs the functions of coupling both power supplies to the electrode, isolating the low frequency power supply from the high frequency power supply and attenuating the undesired frequencies produced by mixing of the two frequencies in the non-linear load represented by the reactor.

Abstract: An improved temperature sensing circuit as disclosed in which the voltage drop across a thermistor is compared to the voltage drop across a capacitor to produce a linear output proportional to temperature.