Abstract: Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.

Abstract: Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.

Abstract: Electronic devices and methods for fabricating electronic devices are described. One method includes providing a substrate and a die, and coupling the die to the substrate, wherein a gap remains between the die and the substrate. The method also includes placing an underfill material on the substrate and delivering at least part of the underfill material into the gap. The method also includes controlling the flow of the underfill material in the gap using magnetic force. Other embodiments are described and claimed.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: Electronic devices and methods for fabricating electronic devices are described. One method includes providing a substrate and a die, and coupling the die to the substrate, wherein a gap remains between the die and the substrate. The method also includes placing an underfill material on the substrate and delivering at least part of the underfill material into the gap. The method also includes controlling the flow of the underfill material in the gap using magnetic force. Other embodiments are described and claimed.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: Smart curing by coupling a catalyst to one or more surface(s) of one or more microelectronic element(s) is generally described. In this regard, according to one example embodiment, a catalyst is coupled to one or more surface(s) of one or more microelectronic element(s) to promote polymerization of an adhesive brought in contact with the catalyst.

Abstract: Electronic devices and methods for fabricating electronic devices are described. One method includes providing a substrate and a die, and coupling the die to the substrate, wherein a gap remains between the die and the substrate. The method also includes placing an underfill material on the substrate and delivering at least part of the underfill material into the gap. The method also includes controlling the flow of the underfill material in the gap using magnetic force. Other embodiments are described and claimed.

Abstract: Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.

Abstract: Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.

Abstract: The present invention is related to a linear functional polymer having repeating units A, B and D. Unit A represents —CH2—, unit B represents and unit D represents where R1 represents a polar functional group. There are at least four A units separating each B unit, each D unit, and each B and D unit. The value y represents the total number of B units and is an integer greater than or equal to 1. The total number of D units is represented by h and is an integer greater than or equal to 0. And x represents the total number of A units and is an integer sufficient that the molar fraction of the B and D units in the linear functional polymer is represented by a value j defined by the equation: j = y + h x + y + h ? 0.032 . The present invention is also directed to a method for preparing such linear functional polymers by copolymerizing a first polar substituted monomer and a second non-polar unsubstituted monomer.

Abstract: The present invention is related to a linear functional polymer having repeating units A, B and D. Unit A represents —CH2—, unit B represents and unit D represents where R1 represents a polar functional group. There are at least four A units separating each B unit, each D unit, and each B and D unit. The value y represents the total number of B units and is an integer greater than or equal to 1. The total number of D units is represented by h and is an integer greater than or equal to 0. And x represents the total number of A units and is an integer sufficient that the molar fraction of the B and D units in the linear functional polymer is represented by a value j defined by the equation: j = y + h x + y + h ? 0.032 . The present invention is also directed to a method for preparing such linear functional polymers by copolymerizing a first polar substituted monomer and a second non-polar unsubstituted monomer.

Abstract: The present invention is related to a linear functional polymer having repeating units A, B and D. Unit A represents —CH2—, unit B represents and unit D represents where R1 represents a polar functional group. There are at least four A units separating each B unit, each D unit, and each B and D unit. The value y represents the total number of B units and is an integer greater than or equal to 1. The total number of D units is represented by h and is an integer greater than or equal to 0. And x represents the total number of A units and is an integer sufficient that the molar fraction of the B and D units in the linear functional polymer is represented by a value j defined by the equation: j = y + h x + y + h ? 0.032 . The present invention is also directed to a method for preparing such linear functional polymers by copolymerizing a first polar substituted monomer and a second non-polar unsubstituted monomer.

Abstract: A chip-packaging composition includes a thermosetting resin and at least one of an N-heterocyclic carbene adduct, an imidazole, and a cycloaliphatic amine hardener. The chip-packaging composition is applied to flip-chip technology during no-flow underfill mounting of the flip-chip to a mounting substrate. The mounting substrate can be further mounted on a board. A process includes formation of the chip-packaging composition. A method includes assembly of the chip-packaging composition with the flip-chip, and further can include assembly of the mounting substrate to a board. A computing system is also included that uses the chip-packaging composition.

Abstract: A process of packaging a microelectronic chip includes wafer-level application of a chip-packaging composition that includes a polymer of a bis-maleimide. A process includes wafer-level addition of the chip-packaging compositions that include adding particulate fillers to achieve a coefficient of thermal expansion of about 20 ppm/K. A computing system is also included that uses a microelectronic die that was processed with the bis-maleimide at the wafer level, before singulation.

Abstract: Integrated circuit packages and their manufacture are described, wherein the packages comprise dendrimers or hyperbranched polymers. In some implementations, the dendrimers or hyperbranched polymers include repeat units having one or more ring structures and having surface groups to react with one or more components of a plastic. In some implementations, the dendrimers or hyperbranched polymers have a glass transition temperature of less than an operating temperature of the integrated circuit and form at least a partially separate phase.

Abstract: An embodiment is a cyclic olefin semiconductor package. Further an embodiment is a combination of a cyclic olefin monomer and a ruthenium-based catalyst that is stable at approximately room temperature and humidity for extended storage life and pot life, and that can be screen printed or valve/jet deposited.

Abstract: An in-situ method for performing organic metathesis polymer chemistry in the solid state includes the step of providing an organic monomer and a catalyst, the catalyst for driving a metathesis polymerization reaction of the monomer. The organic monomer can be provided as a liquid monomer. The reaction produces reaction products including a polymeric end product and at least one volatile reaction product. At least a portion of the volatile reaction product is removed during the reaction to favor formation of the reaction product. Significantly, the reaction is performed at a temperature being below an average melting point of the polymeric end product such that at least a portion of the reaction is performed in the solid phase.