Abstract: Systems and techniques are disclosed for planning and performing an audit. The systems and techniques determine whether a Single Audit or a program-specific audit is to be performed for an entity, and automatically select one or more compliance procedures that are to be used during the auditing process.

Abstract: Systems and techniques are disclosed for planning and performing an audit. The systems and techniques determine whether a Single Audit or a program-specific audit is to be performed for an entity, and automatically select one or more compliance procedures that are to be used during the auditing process.

Abstract: Systems and techniques are disclosed for planning and performing a Single Audit. The systems and techniques determine whether a Single Audit is to be performed for an entity, and automatically select or enable selection of compliance procedures that are to be used during the auditing process.

Abstract: Systems and techniques are disclosed for planning and performing an audit. The systems and techniques determine whether a Single Audit or a program-specific audit is to be performed for an entity, and automatically select one or more compliance procedures that are to be used during the auditing process.

Abstract: A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

Abstract: A backside illuminated charge coupled device (CCD) is formed of a relatively thick high resistivity photon sensitive silicon substrate, with frontside electronic circuitry, and an optically transparent backside ohmic contact for applying a backside voltage which is at least sufficient to substantially fully deplete the substrate. A greater bias voltage which overdepletes the substrate may also be applied. One way of applying the bias voltage to the substrate is by physically connecting the voltage source to the ohmic contact. An alternate way of applying the bias voltage to the substrate is to physically connect the voltage source to the frontside of the substrate, at a point outside the depletion region. Thus both frontside and backside contacts can be used for backside biasing to fully deplete the substrate. Also, high resistivity gaps around the CCD channels and electrically floating channel stop regions can be provided in the CCD array around the CCD channels.

Abstract: The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side.