Patents by Inventor Stephen Edward Savas
Stephen Edward Savas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200227239Abstract: Electrostatic shields for inductive plasma sources are provided. In one implementations, a plasma processing apparatus can include a plasma chamber, a dielectric wall forming at least a portion of the plasma chamber, an inductive coupling element located proximate the dielectric wall. The inductive coupling element can generate a plasma in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can further include an electrostatic shield located between the inductive coupling element and the dielectric wall. The electrostatic shield can include a plurality of shield plates, slots, and/or layers.Type: ApplicationFiled: January 11, 2019Publication date: July 16, 2020Inventors: Stephen Edward Savas, Chen-An Chen, Shawming Ma
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Patent number: 10544519Abstract: During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.Type: GrantFiled: August 25, 2017Date of Patent: January 28, 2020Assignee: AIXTRON SEInventors: Stephen Edward Savas, Miguel Angel Saldana, Dan Lester Cossentine, Hae Young Kim, Subramanian Tamilmani, Niloy Mukherjee, M Ziaul Karim
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Patent number: 10294562Abstract: Described herein is an exhaust manifold (1) comprising suction opening (2), a gas extraction chamber (3), an intermediate space (9), a gas collection chamber (5) and a suction line (4). A flow-impeding structure may be present within the intermediate space (9). The flow impeding structure may exert a flow resistance on the gas flow which is greater in a central zone (Z) than in edge zones (R) of the intermediate space (9), causing gas to flow into the suction opening (2) at a substantially uniform gas flow speed across the cross section of the suction opening (2).Type: GrantFiled: April 5, 2016Date of Patent: May 21, 2019Assignee: AIXTRON SEInventors: Carl Galewski, Stephen Edward Savas, Merim Mukinovic
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Publication number: 20190062947Abstract: During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.Type: ApplicationFiled: August 25, 2017Publication date: February 28, 2019Inventors: Stephen Edward Savas, Miquel Angel Saldana, Dan Lester Cossentine, Hae Young Kim, Subramanian Tamilmani, Niloy Mukherjee, M. Ziaul Karim
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Patent number: 10049859Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: July 8, 2010Date of Patent: August 14, 2018Assignee: Aixtron SEInventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 9852887Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.Type: GrantFiled: August 23, 2013Date of Patent: December 26, 2017Assignee: Advanced Ion Beam Technology, Inc.Inventors: Stephen Edward Savas, Xiao Bai, Zhimin Wan, Peter M. Kopalidis
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Publication number: 20170283946Abstract: Described herein is an exhaust manifold (1) comprising suction opening (2), a gas extraction chamber (3), an intermediate space (9), a gas collection chamber (5) and a suction line (4). A flow-impeding structure may be present within the intermediate space (9). The flow impeding structure may exert a flow resistance on the gas flow which is greater in a central zone (Z) than in edge zones (R) of the intermediate space (9), causing gas to flow into the suction opening (2) at a substantially uniform gas flow speed across the cross section of the suction opening (2).Type: ApplicationFiled: April 5, 2016Publication date: October 5, 2017Inventors: Carl Galewski, Stephen Edward Savas, Merim Mukinovic
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Patent number: 9721759Abstract: Described herein are techniques for supplying radio frequency (RF) power to a large area plasma source so as to produce a plasma that is substantially uniform in two spatial dimensions. The RF power may be supplied by a power supply system, which may comprise a RF source and a distribution network. The distribution network may comprise a matching network, and a branching circuit that divides the RF power into several branches. Each of the branches of the distribution network may include a phase shifter that shifts the RF signal (which carries the RF power) by an odd multiple of 90°, and a blocking filter which blocks any harmonics and other unwanted frequencies which are reflected from a plasma source. The output of the branches may be coupled to feed points that are spatially distributed over the one or more electrodes of the plasma source.Type: GrantFiled: April 4, 2016Date of Patent: August 1, 2017Assignee: AIXTRON SEInventors: Richard Keith Karlquist, Stephen Edward Savas, Robert Eugene Weisse
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Patent number: 9359674Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: GrantFiled: July 1, 2014Date of Patent: June 7, 2016Assignee: Aixtron, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Publication number: 20150056380Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.Type: ApplicationFiled: August 23, 2013Publication date: February 26, 2015Applicant: ADVANCED ION BEAM TECHNOLOGY , INC.Inventors: Stephen Edward Savas, Xiao Bai, Zhimin Wan, Peter M. Kopalidis
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Publication number: 20140314965Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: ApplicationFiled: July 1, 2014Publication date: October 23, 2014Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Patent number: 8765232Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: GrantFiled: January 10, 2012Date of Patent: July 1, 2014Assignee: PlasmaSi, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Patent number: 8697197Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: July 8, 2010Date of Patent: April 15, 2014Assignee: Plasmasi, Inc.Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20120225218Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: ApplicationFiled: January 10, 2012Publication date: September 6, 2012Applicant: PlasmaSi, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Publication number: 20110005681Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: July 8, 2010Publication date: January 13, 2011Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20110006040Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: July 8, 2010Publication date: January 13, 2011Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20110005682Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: July 8, 2010Publication date: January 13, 2011Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 6838387Abstract: Plasma reactor and process for very fast etching of silicon or epoxy resins in which a wafer is placed on a pedestal in a chamber, gas is exhausted from the chamber through a pressure regulation valve, a gas containing fluorine and/or oxygen is introduced into chamber through a showerhead electrode which is positioned substantially parallel to and less than 6 mm from the pedestal, RF power is applied to the pedestal and/or the showerhead electrode, and the pressure inside the chamber is maintained at a level greater than 1.5 Torr.Type: GrantFiled: June 21, 2001Date of Patent: January 4, 2005Inventors: John Zajac, Stephen Edward Savas
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Patent number: 6501636Abstract: Electrostatic clamp structure having a pedestal in which the normal hard insulator surface facing the wafer for a conventional electrostatic clamp is replaced by resilient layer(s) adjacent to the wafer. In this structure the layer(s) adjacent to the wafer permit the “bumps” on the facing wafer surface to “sink into” the resilient layer of the chuck so that a substantial part of the bumpy wafer surface is in good thermal contact with the resilient layers. Such resilient layers are bonded to an underlying metal pedestal. These layers are adequate conductors of heat and are in good thermal contact with an underlying pedestal structure which may be actively cooled by conventional means.Type: GrantFiled: June 21, 2001Date of Patent: December 31, 2002Inventors: Stephen Edward Savas, John Zajac