Abstract: A method for identifying optimal locations for strain gage placement on a structure includes: providing a finite element (FE) model of the structure with an initial number I of candidate strain gage locations; conducting FE analysis to produce a strain matrix [S] of strain predictions, based on a load matrix [L] of external loads being applied to the FE model; relating the matrices to each other in a linear relationship model [L]=[S][?] having a residual error function; and reducing the initial number of the candidate locations to a reduced number by using a feature selection algorithm which minimizes the residual error function until a predetermined fidelity is achieved, resulting in a subset of the coefficients in the coefficients matrix [?] being zero and a remainder of the coefficients being non-zero, wherein the non-zero coefficients correspond to respective strain matrix columns and to the reduced number of candidate locations.

Abstract: A filter is formed on a substrate, such as a solid state imager, by providing successively on the substrate a layer of an absorber material, a layer of a barrier material, and a layer of a photoresist material. The photoresist is patternwise exposed and developed, thereby baring regions of the barrier layer underlying selected regions of the photoresist layer. The coated substrate is reactive ion etched under a first set of etching conditions to etch away the bared regions of the barrier layer and to bare but not substantially etch the underlying regions of the absorber layer, and then reactive ion etched under a second set of etching conditions, thereby etching away the remaining regions of the photoresist layer and the bared regions of the absorber layer, so forming a filter on the substrate. To form multi-colored filters, the process may be repeated with a different dye, or additional dyes may be deposited by other processes, such as that described in U.S. Pat. No. 4,808,501.

Abstract: A filter is formed on a substrate, such as a solid state imager, by providing successively on the substrate a layer of an absorber material, a layer of a barrier material, and a layer of a photoresist material. The photoresist is patternwise exposed and developed, thereby baring regions of the barrier layer underlying selected regions of the photoresist layer. The coated substrate is reactive ion etched under a first set of etching conditions to etch away the bared regions of the barrier layer and to bare but not substantially etch the underlying regions of the absorber layer, and then reactive ion etched under a second set of etching conditions, thereby etching away the remaining regions of the photoresist layer and the bared regions of the absorber layer, so forming a filter on the substrate. To form multi-colored filters, the process may be repeated with a different dye, or additional dyes may be deposited by other processes, such as that described in U.S. Pat. No. 4,808,501.