Abstract: Disclosed are embodiments of a design structure for a voltage level shifter circuit that operates without forward biasing junction diodes, regardless of the sequence in which different power supplies are powered up. The circuit embodiments incorporate a pair of series connected switches (e.g., transistors) between an input terminal and a voltage adjusting circuit. Each switch is controlled by a different supply voltage from a different power supply. Only when both power supplies are powered-up and the different supply voltages are received at both switches will a first signal generated using one of the supply voltages be passed to a voltage adjusting circuit and thereafter converted into a second signal representative of the first signal, but generated using the second supply voltage. Incorporation of the pair of series connected switches into the voltage level shifter circuit prevents forward biasing of junction diodes in the circuit and thereby prevents current leakage from the power supplies.

Abstract: Disclosed are embodiments of a design structure for a voltage level shifter circuit that operates without forward biasing junction diodes, regardless of the sequence in which different power supplies are powered up. The circuit embodiments incorporate a pair of series connected switches (e.g., transistors) between an input terminal and a voltage adjusting circuit. Each switch is controlled by a different supply voltage from a different power supply. Only when both power supplies are powered-up and the different supply voltages are received at both switches will a first signal generated using one of the supply voltages be passed to a voltage adjusting circuit and thereafter converted into a second signal representative of the first signal, but generated using the second supply voltage. Incorporation of the pair of series connected switches into the voltage level shifter circuit prevents forward biasing of junction diodes in the circuit and thereby prevents current leakage from the power supplies.

Abstract: Disclosed are embodiments of a design structure for a voltage level shifter circuit that operates without forward biasing junction diodes, regardless of the sequence in which different power supplies are powered up. The circuit embodiments incorporate a pair of series connected switches (e.g., transistors) between an input terminal and a voltage adjusting circuit. Each switch is controlled by a different supply voltage from a different power supply. Only when both power supplies are powered-up and the different supply voltages are received at both switches will a first signal generated using one of the supply voltages be passed to a voltage adjusting circuit and thereafter converted into a second signal representative of the first signal, but generated using the second supply voltage. Incorporation of the pair of series connected switches into the voltage level shifter circuit prevents forward biasing of junction diodes in the circuit and thereby prevents current leakage from the power supplies.

Abstract: Disclosed are embodiments of a design structure for a voltage level shifter circuit that operates without forward biasing junction diodes, regardless of the sequence in which different power supplies are powered up. The circuit embodiments incorporate a pair of series connected switches (e.g., transistors) between an input terminal and a voltage adjusting circuit. Each switch is controlled by a different supply voltage from a different power supply. Only when both power supplies are powered-up and the different supply voltages are received at both switches will a first signal generated using one of the supply voltages be passed to a voltage adjusting circuit and thereafter converted into a second signal representative of the first signal, but generated using the second supply voltage. Incorporation of the pair of series connected switches into the voltage level shifter circuit prevents forward biasing of junction diodes in the circuit and thereby prevents current leakage from the power supplies.

Abstract: Disclosed is a method and apparatus for autonomously self-monitoring and self-adjusting the operation of an integrated circuit device throughout the integrated circuit device's useful life. The invention periodically performs performance self-testing on the integrated circuit device throughout the integrated circuit devices useful life. The invention also evaluates whether results from the self-testing are within acceptable limits and self-adjusts parameters of the integrated circuit device until the results from the self-testing are within the acceptable limits.

Abstract: A method and circuit for adjusting the read margin of a self-timed memory array. The electronic circuit, including: a memory cell array including a sense amplifier self-timed decode circuit adapted to set a base read time delay of the memory cell array; and a read delay adjustment circuit coupled to the memory cell array, the read delay adjustment circuit adapted to adjust the base read time delay of the memory array based on an operating frequency of the memory cell array.

Abstract: A current reference circuit, for generating a reference current from a low voltage supply source, includes a first n-channel field effect transistor (NFET) having a gate and a drain that are coupled together, and a grounded body; and a second NFET having a floating body, and a gate coupled to the gate of the first NFET.

Abstract: The invention comprises a diode in a well having trench isolation that has an edge. Both the well contact of the diode and the rectifying contact of the diode are silicided, but the silicide on the rectifying contact is spaced from the trench isolation edge. The spacing is provided by a gate stack or other mask. In one embodiment, the gate stack alone spaces the two diode contacts from each other, eliminating the need for trench isolation therebetween. The structure reduces diode series resistance and silicide junction penetration. It significantly improves heat flow in trench isolation technologies, increasing the level of ESD protection. The invention also comprises an SOI diode having a lightly doped region in the thin layer of semiconductor under a gate stack with an ohmic contact to the lightly doped region self-aligned to an edge of the gate stack.

Abstract: A semiconductor structure of merged isolation and node trench construction is presented, along with a method of fabrication, wherein an isolation implant layer is formed at the intersection of the storage node, isolation trench and field isolation region. The isolation implant layer has higher concentration of implant species than the adjacent field isolation region and is positioned to prevent a parasitic leakage mechanism between the source/drain diffusion of the storage node and an adjacent bit line contact diffusion. Implantation occurs during memory structure fabrication through the deep trench sidewall near the upper surface of the substrate.

Abstract: A semiconductor structure of merged isolation and node trench construction is presented, along with a method of fabrication, wherein an isolation implant layer is formed at the intersection of the storage node, isolation trench and field isolation region. The isolation implant layer has higher concentration of implant species than the adjacent field isolation region and is positioned to prevent a parasitic leakage mechanism between the source/drain diffusion of the storage node and an adjacent bit line contact diffusion. Implantation occurs during memory structure fabrication through the deep trench sidewall near the upper surface of the substrate.

Abstract: A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600.degree. C. is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF.sub.3 is the fluorine-containing compound, and a temperature greater than about 700.degree. C. at a concentration of between about 100 to 1000 ppm is used.

Abstract: The invention provides a method for electrically connecting a polysilicon-filled trench to a diffusion region in a semiconductor device, wherein the trench and diffusion region are separated by a dielectric. The method provides for formation of a strap or bridge contact by utilizing a diffusion barrier layer which prevents diffusion into an overlying polysilicon layer when a subsequent boron out-diffusion step is performed. Selective etching is then utilized to remove the polysilicon layer where no boron has diffused, leaving a polysilicon strap connecting the trench and diffusion region.