Abstract: In a non-gold-doped TTL device to be energized by a potential supply of at least 4.5 volts; the charge carrier concentration within a NPN multi-emitter input transistor is reduced by connecting together the base and the collector; undesirable emitter-to-emitter transistor action is prevented, by reducing the inverse current gain factor of the input transistor, and preventing this transistor from saturating, by providing a diode within the phase splitter stage, to ensure that the input threshold level of the device is at least two forward biased diode potentials above the least positive supply rail; and providing a suitable pull-up stage for the output transistor, which pull-up stage may comprise a modified Darlington pair of transistors, including a resistor between the emitter of the first transistor and the base of the second transistor, and a resistor between the base and the emitter of the second transistor.