Abstract: A centerbody assembly includes a center tube, a forward bulkhead, an aft bulkhead, at least one baffle, and an outer skin. The center tube extends circumferentially about an axial centerline. The center tube extends between and to a first axial tube end and a second axial tube end. The forward bulkhead is mounted to the center tube at the first axial tube end. The aft bulkhead is mounted to the center tube at the second axial tube end. The at least one baffle extends axially from the forward bulkhead to the aft bulkhead. At least the forward bulkhead, the aft bulkhead, or the at least one baffle include one or more thermal beads. The outer skin circumscribes the center tube, the forward bulkhead, the aft bulkhead, and the at least one baffle to form an acoustic cavity radially inside the outer skin.

Abstract: A method for laying out custom integrated circuits includes the steps of preliminarily laying out a custom integrated circuit using a plurality of libraried standardized programmed cells (p-cells). Buildcode representations are then assigned for each of a plurality of circuit components and features thereof to realize customization of at least a portion of the plurality of p-cells. A final layout of the custom integrated circuit is then generated using the buildcode representations.

Abstract: An IGFET that minimizes the effect of the dislocation at the edge of the device region by displacing the lateral edges of the source and drain regions from the adjacent edge of the opening and the dislocation. This minimizes the lateral diffusion of the source and drain impurities and the formation of metal silicides into the dislocation region. The spacing of the lateral edges of the source and drain regions from the adjacent edge of the opening and the dislocation region is produced by providing additional lateral opposed second gate regions or oxide barrier layer extending from the oxide layer into the adjacent regions of the substrate region and the first gate region extending therebetween. Both the first gate region and the two second gate regions or barrier layer are used in the self-aligned processing of the source and drain regions. The first gate region defines the length of the channel, while the two opposed second gate regions or barrier layer define the width of the channel region.