Patents by Inventor Stephen H.S. Tang

Stephen H.S. Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Interconnection for memory electrodes
    Patent number: 11715500
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Grant
    Filed: September 24, 2021
    Date of Patent: August 1, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H. S. Tang
  • INTERCONNECTION FOR MEMORY ELECTRODES
    Publication number: 20220084560
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Application
    Filed: September 24, 2021
    Publication date: March 17, 2022
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H.S. Tang
  • Interconnection for memory electrodes
    Patent number: 11139002
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: October 5, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H. S. Tang
  • INTERCONNECTION FOR MEMORY ELECTRODES
    Publication number: 20200258552
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Application
    Filed: February 13, 2020
    Publication date: August 13, 2020
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H.S. Tang
  • Interconnection for memory electrodes
    Patent number: 10600452
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: March 24, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H. S. Tang
  • INTERCONNECTION FOR MEMORY ELECTRODES
    Publication number: 20190013052
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Application
    Filed: July 9, 2018
    Publication date: January 10, 2019
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H.S. Tang
  • Interconnection for memory electrodes
    Patent number: 10056120
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: August 21, 2018
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H. S. Tang
  • INTERCONNECTION FOR MEMORY ELECTRODES
    Publication number: 20170352387
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Application
    Filed: August 14, 2017
    Publication date: December 7, 2017
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H.S. Tang
  • Interconnection for memory electrodes
    Patent number: 9767860
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: September 19, 2017
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H. S. Tang
  • INTERCONNECTION FOR MEMORY ELECTRODES
    Publication number: 20160351233
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 1, 2016
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H.S. Tang
  • Interconnection for memory electrodes
    Patent number: 9378774
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: June 28, 2016
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H. S. Tang
  • INTERCONNECTION FOR MEMORY ELECTRODES
    Publication number: 20150070960
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Application
    Filed: November 17, 2014
    Publication date: March 12, 2015
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H.S. Tang
  • Interconnection for memory electrodes
    Patent number: 8891280
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: November 18, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H. S. Tang
  • INTERCONNECTION FOR MEMORY ELECTRODES
    Publication number: 20140104918
    Abstract: Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
    Type: Application
    Filed: October 12, 2012
    Publication date: April 17, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Hernan A. Castro, Everardo Torres Flores, Stephen H.S. Tang