Abstract: A system for sputtering uniformly thick films on a substrate is disclosed. The system includes a magnetron-sputtering cathode in a vacuum chamber, a gas inlet which injects processing gas at one end of the chamber, and a pump that pumps the processing gas from the other end of the chamber causing the process gas to flow across the substrate during processing. The magnetron-sputtering cathode includes a magnet array that is substantially circular. The magnets on the magnet array are positioned such that the gap between the magnets is smaller on the top of the array near the gas inlet than on the bottom of the array near the pump. The distribution of magnets creates a magnetic flux profile that results in more of the target being sputtered near the top of the cathode creating a thicker film at the top of the substrate.

Abstract: A facing target sputtering apparatus, comprising: inner and outer spaced-apart, concentric, and coextensive tubular cathodes open at each end, with the inwardly facing surface of the outer cathode and the outwardly facing surface of the inner cathode; a first pair of ring-shaped magnet means extending around the outwardly facing surface of the outer cathode at the ends thereof, with a first polarity magnetic pole facing the outwardly facing surface; a second pair of ring-shaped magnet means extending around the inwardly facing surface of the inner cathode at the ends thereof, with a second, opposite polarity magnetic pole facing the inwardly facing surface; and a substrate positioned in spaced adjacency to an end of the inner and outer cathodes; wherein: magnetic flux lines from the first and second pairs of magnet means uni-directionally pass through portions of an annularly-shaped space between the ends of the inner and outer cathodes, and during sputtering operation, plasma is substantially confined t