Abstract: A cosmetic compact for solid or semi solid cosmetic product. The cosmetic compact comprising a lid and a base assembly, wherein the base assembly comprising a base, a frame, a shock absorbing member, and at least one cosmetic pan. The shock absorbing member is disposed in a cavity of the base. The shock absorbing member is coupled to the base and is coupled to the at least one cosmetic pan such that a shock imparted on the cosmetic compact is isolated from the at least one cosmetic pan. The shock absorbing member is deformable and comprises a hollow tubular body defining a central bore extending between an upper-flange and a lower-flange of the shock absorbing member.

Abstract: A system for measuring at least one physiological parameter includes a wearable device configured to be secured to a subject's foot and a camera configured to captures images of the subject. An electronic device may be in communication with the system and can display information relating to physiological data and/or images collected by the system.

Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

Abstract: Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit.

Abstract: Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit.

Abstract: Disclosed are methods including orally administering oral sustained release dosage forms comprising a benzimidazole derivative to a patient suffering from one or more gastric acid related diseases; wherein the benzimidazole derivative is sustainably released from the oral sustained release dosage form for a period of at least about 10 hours, and at rates effective to maintain an intragastric pH of the patient ?about 4 during at least about 65% of the period. Related compositions are also disclosed.

Abstract: Disclosed are substances, compositions, dosage forms and methods that comprise tramadol and substances that comprise gabapentin.

Abstract: Disclosed are substances, compositions, dosage forms and methods relating to drugs including 3-aminopropyl-n-butyl-phosphinic acid; structural homologs thereof; 3-aminopropyl-n-butyl-phosphinic acid complexes; complexes that comprise structural homologs of 3-aminopropyl-n-butyl-phosphinic acid; pharmaceutically acceptable salts of 3-aminopropyl-n-butyl-phosphinic acid or structural homologs thereof; and mixtures of the above.

Abstract: A method of removing a set of particles from a set of structures including yttrium oxide is disclosed. The method includes exposing the set of structures to a first solution including an oxidizer for a first period. The method also includes removing the set of structures from the first solution, and exposing the set of structures to a second solution including a keytone reagent for a second period. The method further includes removing the set of structures from the second solution, and mechanically rubbing the set of structures with a third solution including a first set of acids for a third period.

Abstract: Disclosed are substances, compositions, dosage forms and methods that comprise levodopa and/or carbidopa.

Abstract: Oxycodone formulations are provided which produce substantially flat in vivo steady state plasma profiles. Tolerance levels associated with such profiles and tolerance levels associated with biphasic profiles are shown not to be statistically different. The substantially flat in vivo steady state plasma profiles are produced by dosage forms having substantially zero order in vitro release profiles. Such release profiles produce low single dose in vivo Cmax levels which can reduce the probability of adverse side effects.

Abstract: A process to reduce M1/N+ contact resistance includes a low temperature anneal step, after the aluminum interconnect is alloyed at 400.degree. C. During the low temperature anneal step, the temperature of the furnace tube is lowered from 400.degree. C. to 250.degree. C. over a period of two hours, after which the integrated circuit is annealed under nitrogen for a further period of one hour. Alternately, the low temperature anneal is performed in an oven filled with nitrogen for a period of two hours at 250.degree. C.