Patents by Inventor Stephen J. Cannizzaro, Jr.

Stephen J. Cannizzaro, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5374325
    Abstract: Semiconductor wafers are vertically loaded into a cassette, the cassette is placed on a support structure, the cassette and support structure are placed in a drop-in tank, and the drop-in tank is placed inside a larger tank containing etching solution. Holes in the drop-in tank allow the etching solution in the larger tank to enter and fill the drop-in tank. A pump sucks etching solution out of the larger tank and as a result, also sucks etching solution out of the drop-in tank through the holes. The pumped out solution is then filtered of residue waste resulting from the etching process, and the filtered solution is pumped into a hollow portion of the support structure and from thence, out of the hollow portion through holes formed on a top surface of the support structure, generating thereby, currents of filtered etching solution.
    Type: Grant
    Filed: October 21, 1993
    Date of Patent: December 20, 1994
    Assignee: VLSI Technology, Inc.
    Inventor: Stephen J. Cannizzaro, Jr.
  • Patent number: 5282923
    Abstract: A plurality of semiconductor wafers are vertically loaded into a cassette, the cassette is placed on a support structure, the cassette and support structure are placed in a drop-in tank, and the drop-in tank is placed inside a larger tank containing etching solution. A plurality of holes in the drop-in tank allow the etching solution in the larger tank to enter and fill the drop-in tank. A pump sucks etching solution out of the larger tank and as a result, also sucks etching solution out of the drop-in tank through the plurality of holes. The pumped out solution is then filtered of residue waste resulting from the etching process, and the filtered solution is pumped into a hollow portion of the support structure and from thence, out of the hollow portion through a plurality of holes formed on a top surface of the support structure, generating thereby, currents of filtered etching solution.
    Type: Grant
    Filed: August 13, 1992
    Date of Patent: February 1, 1994
    Assignee: VLSI Technology, Inc.
    Inventor: Stephen J. Cannizzaro, Jr.