Abstract: An apparatus and method are provided for picking up an integrated circuit and for facilitating the optical testing thereof. The apparatus comprises a pick-up mechanism that includes a vacuum chamber. The vacuum chamber is defined by an upper portion, an expandable member, and a lower portion. The lower portion defines a suction orifice that is moveable with a movement of the expandable member. An optical pathway is defined by the vacuum chamber, the optical pathway passing through the suction orifice and onto an integrated circuit that is held against the suction orifice via a vacuum pressure applied to the vacuum chamber.

Abstract: An apparatus and method are provided for picking up an integrated circuit and for facilitating the optical testing thereof. The apparatus comprises a pick-up mechanism that includes a vacuum chamber. The vacuum chamber is defined by an upper portion, an expandable member, and a lower portion. The lower portion defines a suction orifice that is moveable with a movement of the expandable member. An optical pathway is defined by the vacuum chamber, the optical pathway passing through the suction orifice and onto an integrated circuit that is held against the suction orifice via a vacuum pressure applied to the vacuum chamber.

Abstract: An apparatus and method are provided for picking up an integrated circuit and for facilitating the optical testing thereof. The apparatus comprises a pick-up mechanism that includes a vacuum chamber. The vacuum chamber is defined by an upper portion, an expandable member, and a lower portion. The lower portion defines a suction orifice that is moveable with a movement of the expandable member. An optical pathway is defined by the vacuum chamber, the optical pathway passing through the suction orifice and onto an integrated circuit that is held against the suction orifice via a vacuum pressure applied to the vacuum chamber.

Abstract: A quasi-dielectrically isolated (QDI) bipolar structure using epitaxial lateral overgrowth (ELO) uses a combination of dielectric isolation (DI) and junction isolation (JI), providing better isolation properties than JI, while providing better heat dissipation than DI. ELO silicon is grown out of a deep basin with oxide sidewalls for lateral dielectric isolation. The ELO silicon is grown at a low temperature and pressure in an RF heated pancake-type reactor. Fabricated transistors have gains, ideality factors, and leakage currents comparable to bulk devices. A main application for QDI is in power integrated circuits (PICs) where isolation of high power devices and low power logic is necessary.