Patents by Inventor Stephen J. Koester

Stephen J. Koester has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanowire PIN tunnel field effect devices
    Patent number: 9105482
    Abstract: A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: August 11, 2015
    Assignee: International Business Machines Corporation
    Inventors: Sarunya Bangsaruntip, Stephen J. Koester, Amlan Majumdar, Jeffrey W. Sleights
  • NANOWIRE PIN TUNNEL FIELD EFFECT DEVICES
    Publication number: 20120286242
    Abstract: A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.
    Type: Application
    Filed: July 24, 2012
    Publication date: November 15, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sarunya Bangsaruntip, Stephen J. Koester, Amlan Majumdar, Jeffrey W. Sleight
  • NANOWIRE PIN TUNNEL FIELD EFFECT DEVICES
    Publication number: 20110168982
    Abstract: A method for forming a nanowire tunnel device includes forming a nanowire suspended by a first pad region and a second pad region over a semiconductor substrate, forming a gate structure around a channel region of the nanowire, implanting a first type of ions at a first oblique angle in a first portion of the nanowire and the first pad region, and implanting a second type of ions at a second oblique angle in a second portion of the nanowire and the second pad region.
    Type: Application
    Filed: January 8, 2010
    Publication date: July 14, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sarunya Bangsaruntip, Stephen J. Koester, Amlan Majumdar, Jeffrey W. Sleight