Abstract: In a semiconductor device (e.g. a fast switching Schottky diode) a metal-based layer forms separate areas of an active Schottky barrier between closely-spaced field-relief regions which provide the device with an improved voltage blocking characteristic. In order to restrict the flow of minority carriers into the adjacent body portion under forward bias, the dopant concentration of the field-relief regions at the surface where contacted by the metal-based layer is sufficiently low as to form a further Schottky barrier with the metal-based layer. This further barrier which is in series with the minority-carrier injecting p-n junctions of the field-relief regions is reverse-biased when the active barrier and p-n junction are forward biased so that the minority carrier injection is restricted by the leakage current across the further barrier.